Band bending at the InSb-CdTe interface

R.G. van Welzenis, E.J.D. Vredenbregt

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)


The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.
Original languageEnglish
Pages (from-to)1057-1063
Number of pages7
JournalSolid-State Electronics
Issue number11
Publication statusPublished - 1 Nov 1985


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