Band bending at the InSb-CdTe interface

R.G. van Welzenis; E.J.D. Vredenbregt

doi:10.1016/0038-1101(85)90185-6

Band bending at the InSb-CdTe interface

R.G. van Welzenis, E.J.D. Vredenbregt

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.

Original language	English
Pages (from-to)	1057-1063
Number of pages	7
Journal	Solid-State Electronics
Volume	28
Issue number	11
DOIs	https://doi.org/10.1016/0038-1101(85)90185-6
Publication status	Published - 1 Nov 1985

Access to Document

10.1016/0038-1101(85)90185-6

http://adsabs.harvard.edu/abs/1985SSEle..28.1057V

Cite this

@article{4fb8645b520d490d86c53294451f01dc,

title = "Band bending at the InSb-CdTe interface",

abstract = "The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.",

author = "{van Welzenis}, R.G. and E.J.D. Vredenbregt",

year = "1985",

month = nov,

day = "1",

doi = "10.1016/0038-1101(85)90185-6",

language = "English",

volume = "28",

pages = "1057--1063",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Band bending at the InSb-CdTe interface

AU - van Welzenis, R.G.

AU - Vredenbregt, E.J.D.

PY - 1985/11/1

Y1 - 1985/11/1

N2 - The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.

AB - The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.

U2 - 10.1016/0038-1101(85)90185-6

DO - 10.1016/0038-1101(85)90185-6

M3 - Article

SN - 0038-1101

VL - 28

SP - 1057

EP - 1063

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Band bending at the InSb-CdTe interface

Abstract

Access to Document

Fingerprint

Cite this