Author Correction:: Classification with a disordered dopant atom network in silicon

Tao Chen; Jeroen van Gelder; Bram van de Ven; Sergey V. Amitonov; Bram de Wilde; Hans Christian Ruiz Euler; Hajo Broersma; Peter A. Bobbert; Floris A. Zwanenburg; Wilfred G. van der Wiel

doi:10.1038/s41586-025-08803-8

Author Correction: Classification with a disordered dopant atom network in silicon

Tao Chen
, Jeroen van Gelder
, Bram van de Ven
, Sergey V. Amitonov
, Bram de Wilde
, Hans Christian Ruiz Euler
, Hajo Broersma
, Peter A. Bobbert
, Floris A. Zwanenburg
, Wilfred G. van der Wiel (Corresponding author)

Research output: Contribution to journal › Comment/Letter to the editor › Academic › peer-review

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Abstract

Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020

In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.

Original language	English
Pages (from-to)	E22
Number of pages	1
Journal	Nature
Volume	639
Issue number	8056
DOIs	https://doi.org/10.1038/s41586-025-08803-8
Publication status	Published - 11 Mar 2025

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Publisher Copyright:
© The Author(s), under exclusive licence to Springer Nature Limited 2025.

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title = "Author Correction:: Classification with a disordered dopant atom network in silicon ",

abstract = "Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250{\textendash}295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.",

author = "Tao Chen and \{van Gelder\}, Jeroen and \{van de Ven\}, Bram and Amitonov, \{Sergey V.\} and \{de Wilde\}, Bram and \{Ruiz Euler\}, \{Hans Christian\} and Hajo Broersma and Bobbert, \{Peter A.\} and Zwanenburg, \{Floris A.\} and \{van der Wiel\}, \{Wilfred G.\}",

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doi = "10.1038/s41586-025-08803-8",

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T2 - Classification with a disordered dopant atom network in silicon

AU - Chen, Tao

AU - van Gelder, Jeroen

AU - van de Ven, Bram

AU - Amitonov, Sergey V.

AU - de Wilde, Bram

AU - Ruiz Euler, Hans Christian

AU - Broersma, Hajo

AU - Bobbert, Peter A.

AU - Zwanenburg, Floris A.

AU - van der Wiel, Wilfred G.

PY - 2025/3/11

Y1 - 2025/3/11

N2 - Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.

AB - Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.

UR - https://www.scopus.com/pages/publications/105000074343

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DO - 10.1038/s41586-025-08803-8

M3 - Comment/Letter to the editor

C2 - 40069578

AN - SCOPUS:105000074343

SN - 0028-0836

VL - 639

SP - E22

JO - Nature

JF - Nature

IS - 8056

ER -

Author Correction: Classification with a disordered dopant atom network in silicon

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