Auger recombination as the dominant nonradiative recombination channel in InN

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by its doping density. The inverse relationship between the photoluminescence intensity and the electron density suggests that Auger recombination is the mechanism which actually limits the internal quantum efficiency of these films.