Auger recombination as the dominant nonradiative recombination channel in InN

Y. Cho; X. Lue; M. Wienold; M. Ramsteiner; H.T. Grahn; O. Brandt

doi:10.1103/PhysRevB.87.155203

Auger recombination as the dominant nonradiative recombination channel in InN

Y. Cho, X. Lue, M. Wienold, M. Ramsteiner, H.T. Grahn, O. Brandt

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

Abstract

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by its doping density. The inverse relationship between the photoluminescence intensity and the electron density suggests that Auger recombination is the mechanism which actually limits the internal quantum efficiency of these films.

Original language	English
Article number	155203
Pages (from-to)	155203-1/5
Journal	Physical Review B
Volume	87
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.87.155203
Publication status	Published - 2013

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title = "Auger recombination as the dominant nonradiative recombination channel in InN",

abstract = "We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by its doping density. The inverse relationship between the photoluminescence intensity and the electron density suggests that Auger recombination is the mechanism which actually limits the internal quantum efficiency of these films.",

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AU - Cho, Y.

AU - Lue, X.

AU - Wienold, M.

AU - Ramsteiner, M.

AU - Grahn, H.T.

AU - Brandt, O.

PY - 2013

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N2 - We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by its doping density. The inverse relationship between the photoluminescence intensity and the electron density suggests that Auger recombination is the mechanism which actually limits the internal quantum efficiency of these films.

AB - We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by its doping density. The inverse relationship between the photoluminescence intensity and the electron density suggests that Auger recombination is the mechanism which actually limits the internal quantum efficiency of these films.

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DO - 10.1103/PhysRevB.87.155203

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