Atomic scale characterization of Mn doped InAs/GaAs quantum dots

M. Bozkurt, V.A. Grant, J.M. Ulloa, R.P. Campion, C.T. Foxon, E. Marega, G.J. Salamo, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)
141 Downloads (Pure)


Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 °C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 042108
Original languageEnglish
Article number042108
Pages (from-to)042108-1/3
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2010


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