Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

Raja Gajjela; Paul M. Koenraad

doi:10.3390/nano11010085

Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

Raja Gajjela (Corresponding author)
, Paul M. Koenraad

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Review article › peer-review

26 Citations (Scopus)

186 Downloads (Pure)

Abstract

The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article, we present a detailed review on atomic-scale characterization of droplet epitaxy quantum dots by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT).We will discuss both strain-free GaAs/AlGaAs QDs and strained InAs/InP QDs grown by droplet epitaxy. The effects of various growth conditions on morphology and composition are presented. The efficiency of methods such as flushing technique is shown by comparing with conventional droplet epitaxy QDs to further gain control over QD height. A detailed characterization of etch pits in both QD systems is provided by X-STM and APT. This review presents an overview of detailed structural and compositional analysis that have assisted in improving the fabrication of QD based optoelectronic devices grown by droplet epitaxy.

Original language	English
Article number	85
Number of pages	24
Journal	Nanomaterials
Volume	11
Issue number	1
DOIs	https://doi.org/10.3390/nano11010085
Publication status	Published - 4 Jan 2021

Funding

The research was supported by the funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie, project 4PHOTON grant agreement No 721394. Most of the work presented in the Section 4 was performed by Joris G. Keizer, Juanita Bocquel, Sebastian Koelling during their appointment at the Eindhoven University of Technology and has been published elsewhere apart from some results that were only presented in the Ph.D. thesis of Juanita Bocquel. The InAs/InP DEQDs analyzed in the Section 5 were received from Toshiba Research Europe Limited, Cambridge, and were grown in the National Epitaxy Facility at the University of Sheffield, UK. Funding: The research was supported by the funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie, project 4PHOTON grant agreement No 721394.

Funders	Funder number
Toshiba Europe Limited
European Union's Horizon 2020 - Research and Innovation Framework Programme
Marie Skłodowska‐Curie	721394
Eindhoven University of Technology

Keywords

Quantum Dots
Droplet epitaxy
Cross-sectional scanning tunneling microscopy
Atom probe tomography
Optoelectronics
Quantum dots

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10.3390/nano11010085

nanomaterials-11-00085Final published version, 51 MBLicence: CC BY

Cite this

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title = "Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots",

abstract = "The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article, we present a detailed review on atomic-scale characterization of droplet epitaxy quantum dots by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT).We will discuss both strain-free GaAs/AlGaAs QDs and strained InAs/InP QDs grown by droplet epitaxy. The effects of various growth conditions on morphology and composition are presented. The efficiency of methods such as flushing technique is shown by comparing with conventional droplet epitaxy QDs to further gain control over QD height. A detailed characterization of etch pits in both QD systems is provided by X-STM and APT. This review presents an overview of detailed structural and compositional analysis that have assisted in improving the fabrication of QD based optoelectronic devices grown by droplet epitaxy.",

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N2 - The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article, we present a detailed review on atomic-scale characterization of droplet epitaxy quantum dots by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT).We will discuss both strain-free GaAs/AlGaAs QDs and strained InAs/InP QDs grown by droplet epitaxy. The effects of various growth conditions on morphology and composition are presented. The efficiency of methods such as flushing technique is shown by comparing with conventional droplet epitaxy QDs to further gain control over QD height. A detailed characterization of etch pits in both QD systems is provided by X-STM and APT. This review presents an overview of detailed structural and compositional analysis that have assisted in improving the fabrication of QD based optoelectronic devices grown by droplet epitaxy.

AB - The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article, we present a detailed review on atomic-scale characterization of droplet epitaxy quantum dots by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT).We will discuss both strain-free GaAs/AlGaAs QDs and strained InAs/InP QDs grown by droplet epitaxy. The effects of various growth conditions on morphology and composition are presented. The efficiency of methods such as flushing technique is shown by comparing with conventional droplet epitaxy QDs to further gain control over QD height. A detailed characterization of etch pits in both QD systems is provided by X-STM and APT. This review presents an overview of detailed structural and compositional analysis that have assisted in improving the fabrication of QD based optoelectronic devices grown by droplet epitaxy.

KW - Quantum Dots

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KW - Cross-sectional scanning tunneling microscopy

KW - Atom probe tomography

KW - Optoelectronics

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Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

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Keywords

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