Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

J.G. Keizer, J. Bocquel, P.M. Koenraad, T. Mano, T. Noda, K. Sakoda

Research output: Contribution to journalArticleAcademicpeer-review

54 Citations (Scopus)
125 Downloads (Pure)

Abstract

In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 062101
Original languageEnglish
Article number062101
Pages (from-to)062101-1/3
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number6
DOIs
Publication statusPublished - 2010

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