Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

J.G. Keizer; J. Bocquel; P.M. Koenraad; T. Mano; T. Noda; K. Sakoda

doi:10.1063/1.3303979

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

J.G. Keizer, J. Bocquel, P.M. Koenraad, T. Mano, T. Noda, K. Sakoda

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Abstract

In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 062101

Original language	English
Article number	062101
Pages (from-to)	062101-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.3303979
Publication status	Published - 2010

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title = "Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy",

abstract = "In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed. {\textcopyright} 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 062101",

author = "J.G. Keizer and J. Bocquel and P.M. Koenraad and T. Mano and T. Noda and K. Sakoda",

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language = "English",

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T1 - Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

AU - Keizer, J.G.

AU - Bocquel, J.

AU - Koenraad, P.M.

AU - Mano, T.

AU - Noda, T.

AU - Sakoda, K.

PY - 2010

Y1 - 2010

N2 - In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 062101

AB - In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 062101

U2 - 10.1063/1.3303979

DO - 10.1063/1.3303979

M3 - Article

SN - 0003-6951

VL - 96

SP - 062101-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062101

ER -

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

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