Abstract
In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 062101
Original language | English |
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Article number | 062101 |
Pages (from-to) | 062101-1/3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 |