Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasma

N. Leick, R.O.F. Verkuijlen, L. Lamagna, E. Langereis, S.A. Rushworth, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of - 1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of - 16 µO¿cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.
Original languageEnglish
Article number021016
Pages (from-to)021016-1/7
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume29
Issue number2
DOIs
Publication statusPublished - 2011

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Atomic layer deposition
atomic layer epitaxy
Ruthenium
Gases
Plasmas
ruthenium
gases
Plasma Gases
Carbon Monoxide
Nucleation
roughness
Surface roughness
nucleation
cycles
electrical resistivity
Substrates
Hot Temperature

Cite this

@article{2afdcf0b28174f899aabb1e874920402,
title = "Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasma",
abstract = "The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of - 1 {\AA} was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of - 16 µO¿cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.",
author = "N. Leick and R.O.F. Verkuijlen and L. Lamagna and E. Langereis and S.A. Rushworth and F. Roozeboom and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
year = "2011",
doi = "10.1116/1.3554691",
language = "English",
volume = "29",
pages = "021016--1/7",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasma. / Leick, N.; Verkuijlen, R.O.F.; Lamagna, L.; Langereis, E.; Rushworth, S.A.; Roozeboom, F.; Sanden, van de, M.C.M.; Kessels, W.M.M.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, Vol. 29, No. 2, 021016, 2011, p. 021016-1/7.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasma

AU - Leick, N.

AU - Verkuijlen, R.O.F.

AU - Lamagna, L.

AU - Langereis, E.

AU - Rushworth, S.A.

AU - Roozeboom, F.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2011

Y1 - 2011

N2 - The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of - 1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of - 16 µO¿cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.

AB - The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of - 1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of - 16 µO¿cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.

U2 - 10.1116/1.3554691

DO - 10.1116/1.3554691

M3 - Article

VL - 29

SP - 021016-1/7

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films

SN - 0734-2101

IS - 2

M1 - 021016

ER -