Transparent conductive oxides form an important group of materials that combine high conductivity with high transparency. In this context, the authors designed an atomic layer deposition process for Nb-doped TiO2. The presented process enables accurate control over both the position and concentration of the Nb dopants. The as-deposited films become crystalline (brookite) and low resistive (4.3 × 10−3 Ω cm) upon a postdeposition anneal with temperatures as low as 300 °C. Variations in annealing ambient and temperature yielded resistivity changes over four orders of magnitude and significant changes in the sub-bandgap absorption of light. Next to doping, annealing is therefore shown to be a powerful tool in controlling electrical and optical properties of TiO2:Nb.
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films|
|Publication status||Published - 1 Mar 2020|
Berghuis, W-J. H., Melskens, J., Macco, B., Basuvalingam, S. B., Verheijen, M. A., & Kessels, W. M. M. E. (2020). Atomic layer deposition of Nb-doped TiO2: dopant incorporation and effect of annealing. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 38(2), . https://doi.org/10.1116/1.5134743