Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

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Abstract

In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional doping by Al and B, and enables a high mobility value up to 47 cm2/Vs and a resistivity of 1.8 mΩcm. By proper choice of a deposition regime where there is a strong competition between film growth and film etching by the H2 plasma treatment, a strongly enhanced grain size and hence increased carrier mobility with respect to undoped ZnO can be obtained. The successful incorporation of a significant amount of H from the H2 plasma has been demonstrated, and insights into the mobility-limiting scatter mechanisms have been obtained from temperature-dependent Hall measurements. A comparison with conventional TCOs has been made in terms of optoelectronic properties, and it has been shown that high-mobility ZnO:H has potential for use in various configurations of silicon heterojunction solar cells and silicon-perovskite tandem cells.
Original languageEnglish
Pages (from-to)111-119
Number of pages9
JournalSolar Energy Materials and Solar Cells
Volume173
Early online date25 May 2017
DOIs
Publication statusPublished - 1 Oct 2017

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Zinc Oxide
Atomic layer deposition
Zinc oxide
Hydrogen
Plasmas
Doping (additives)
Silicon
Carrier mobility
Film growth
Optoelectronic devices
Perovskite
Heterojunctions
Etching
Solar cells
Temperature

Cite this

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title = "Atomic layer deposition of high-mobility hydrogen-doped zinc oxide",
abstract = "In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional doping by Al and B, and enables a high mobility value up to 47 cm2/Vs and a resistivity of 1.8 mΩcm. By proper choice of a deposition regime where there is a strong competition between film growth and film etching by the H2 plasma treatment, a strongly enhanced grain size and hence increased carrier mobility with respect to undoped ZnO can be obtained. The successful incorporation of a significant amount of H from the H2 plasma has been demonstrated, and insights into the mobility-limiting scatter mechanisms have been obtained from temperature-dependent Hall measurements. A comparison with conventional TCOs has been made in terms of optoelectronic properties, and it has been shown that high-mobility ZnO:H has potential for use in various configurations of silicon heterojunction solar cells and silicon-perovskite tandem cells.",
author = "B. Macco and H.C.M. Knoops and M.A. Verheijen and W. Beyer and M. Creatore and W.M.M. Kessels",
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language = "English",
volume = "173",
pages = "111--119",
journal = "Solar Energy Materials and Solar Cells",
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Atomic layer deposition of high-mobility hydrogen-doped zinc oxide. / Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

In: Solar Energy Materials and Solar Cells, Vol. 173, 01.10.2017, p. 111-119.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

AU - Macco, B.

AU - Knoops, H.C.M.

AU - Verheijen, M.A.

AU - Beyer, W.

AU - Creatore, M.

AU - Kessels, W.M.M.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional doping by Al and B, and enables a high mobility value up to 47 cm2/Vs and a resistivity of 1.8 mΩcm. By proper choice of a deposition regime where there is a strong competition between film growth and film etching by the H2 plasma treatment, a strongly enhanced grain size and hence increased carrier mobility with respect to undoped ZnO can be obtained. The successful incorporation of a significant amount of H from the H2 plasma has been demonstrated, and insights into the mobility-limiting scatter mechanisms have been obtained from temperature-dependent Hall measurements. A comparison with conventional TCOs has been made in terms of optoelectronic properties, and it has been shown that high-mobility ZnO:H has potential for use in various configurations of silicon heterojunction solar cells and silicon-perovskite tandem cells.

AB - In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional doping by Al and B, and enables a high mobility value up to 47 cm2/Vs and a resistivity of 1.8 mΩcm. By proper choice of a deposition regime where there is a strong competition between film growth and film etching by the H2 plasma treatment, a strongly enhanced grain size and hence increased carrier mobility with respect to undoped ZnO can be obtained. The successful incorporation of a significant amount of H from the H2 plasma has been demonstrated, and insights into the mobility-limiting scatter mechanisms have been obtained from temperature-dependent Hall measurements. A comparison with conventional TCOs has been made in terms of optoelectronic properties, and it has been shown that high-mobility ZnO:H has potential for use in various configurations of silicon heterojunction solar cells and silicon-perovskite tandem cells.

U2 - 10.1016/j.solmat.2017.05.040

DO - 10.1016/j.solmat.2017.05.040

M3 - Article

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

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