Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

A. Delabie, A. Alian, F. Bellenger, G. Brammertz, D.P. Brunco, M. Caymax, T. Conard, A. Franquet, M. Houssa, S. Sioncke, S. Elshocht, van, J.L. Hemmen, van, W. Keuning, W.M.M. Kessels, V.V. Afanasev, A. Stesmans, M.M. Heyns, M. Meuris

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Abstract

Ge and III-V semiconductors are potential high performance channel materials for future CMOS devices. In this work, we have studied At. Layer Deposition (ALD) of high-k dielec. layers on Ge and GaAs substrates. We focus at the effect of the oxidant (H2O, O3, O2, O2 plasma) during gate stack formation. GeO2, obtained by Ge oxidn. in O2 or O3, is a promising passivation layer. The germanium oxide thickness can be scaled down below 1 nm, but such thin layers contain Ge in oxidn. states lower than 4+. Still, elec. results indicate that small amts. of Ge in oxidn. states lower than 4+ are not detrimental for device performance. Partial intermixing was obsd. for high-k dielec. and GeO2 or GaAsOx, suggesting possible correlations in the ALD growth mechanisms on Ge and GaAs substrates. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)671-685
JournalECS Transactions
Volume16
Issue number10
DOIs
Publication statusPublished - 2008

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