Atomic Layer Deposition of Al doped MoS2: Synthesizing a p-type 2D semiconductor with tunable carrier density

Vincent Vandalon (Corresponding author), Marcel A. Verheijen, W.M.M. Kessels, Ageeth A. Bol (Corresponding author)

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Abstract

Extrinsically doped 2D semiconductors are essential for the fabrication of high-performance nanoelectronics amongst many other applications. Here we present a facile synthesis method for Al doped MoS2 via plasmaenhanced atomic-layer deposition (ALD) resulting in particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD based approach also affords excellent control over the doping profile as demonstrated in a combined transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX) study. Sharp transitions in the Al concentration were realized and both doped and undoped material had the
characteristic 2D layered nature. The fine control over the doping concentration, combined with the conformallity and uniformity and sub-nm thickness control inherent to ALD should ensure compatibility with large scale fabrication. This makes Al:MoS2 ALD of interest for nanoelectronics but also for photovoltaics and TMD based catalysts.
Original languageEnglish
Pages (from-to)10200-10208
Number of pages9
JournalACS Applied Nano Materials
Volume3
Issue number10
DOIs
Publication statusPublished - 23 Oct 2020

Funding

This work was partially funded by The Netherlands Organization for Scientific Research (NWO) through the Gravitation program “Research Centre for Integrated Nanophotonics”. This work was also supported by the European Research Council (grant agreement no. 648787-ALD of 2DTMDs). The authors gratefully acknowledge C. A. A. van Helvoirt, J. J. L. M. Meulendijks, C. O. van Bommel, and J. J. A. Zeebregts for their technical assistance. Dr. B. Barcones is acknowledged for FIB preparation of the TEM sample. Solliance and the Dutch province of Noord-Brabant are acknowledged for funding the TEM facility. This work was partially funded by The Netherlands Organization for Scientific Research (NWO) through the Gravitation program ?Research Centre for Integrated Nanophotonics?. This work was also supported by the European Research Council (grant agreement no. 648787-ALD of 2DTMDs). The authors gratefully acknowledge C. A. A. van Helvoirt, J. J. L. M. Meulendijks, C. O. van Bommel, and J. J. A. Zeebregts for their technical assistance. Dr. B. Barcones is acknowledged for FIB preparation of the TEM sample. Solliance and the Dutch province of Noord-Brabant are acknowledged for funding the TEM facility.

FundersFunder number
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Horizon 2020 Framework Programme648787
European Research Council
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

    Keywords

    • 2D TMD
    • ALD
    • Doped semiconductor
    • MoS
    • Thin film
    • Transition-metal dichalcogenide

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