Atomic layer deposition for high-efficiency crystalline silicon solar cells

B. Macco, B.W.H. van de Loo, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

Abstract

This chapter illustrates that Atomic Layer Deposition (ALD) is in fact an enabler of novel high-efficiency Si solar cells, owing to its merits such as a high material quality, precise thickness control, and the ability to prepare film stacks in a well-controlled way. It gives an overview of the field of Si solar cells, where for each concept. The chapter discusses the role of ALD in preparing passivation layers for homojunction Si solar cells. Special attention is given to the physics of surface passivation, the surface passivation by ALD Al2O3, ALD as a high-throughput deposition technique in the photovoltaic (PV) industry, and recent developments in the field of passivation layers prepared by ALD. The chapter focuses on transparent conductive oxides (TCOs) prepared by ALD for use in heterojunction Si solar cells, such as doped ZnO and In2O3 films.
Original languageEnglish
Title of host publicationAtomic Layer Deposition in Energy Conversion Applications
EditorsJ. Bachmann
Place of PublicationWeinheim
PublisherWiley-VCH Verlag
Pages41-99
ISBN (Electronic)9783527694822
ISBN (Print)9783527339129
DOIs
Publication statusPublished - 2017

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