Atomic layer deposition enabled perovskite/PEDOT solar cells in a regular n-i-p architectural design

D. Koushik, W.J.H. Verhees, D. Zhang, Y. Kuang, S. Veenstra, M. Creatore, R.E.I. Schropp

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Abstract

Perovskite solar cells employing poly(3,4-ethylenedioxythiophene) (PEDOT) as hole transport layer on top of methylammonium lead halide are reported, yielding a power conversion efficiency of 11% and a 6% stabilized power output. An atomic layer deposition assisted interface architectural approach is adopted to fabricate the n–i–p perovskite/PEDOT devices. The results present a promising next step toward efficient low-cost perovskite-based photovoltaic technology.
Original languageEnglish
Article number1700043
Number of pages7
JournalAdvanced Materials Interfaces
Volume4
Issue number18
Early online date21 Mar 2017
DOIs
Publication statusPublished - 22 Sep 2017

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Architectural design
Atomic layer deposition
Perovskite
Solar cells
Conversion efficiency
Lead
Costs
Perovskite solar cells

Cite this

Koushik, D. ; Verhees, W.J.H. ; Zhang, D. ; Kuang, Y. ; Veenstra, S. ; Creatore, M. ; Schropp, R.E.I. / Atomic layer deposition enabled perovskite/PEDOT solar cells in a regular n-i-p architectural design. In: Advanced Materials Interfaces. 2017 ; Vol. 4, No. 18.
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Atomic layer deposition enabled perovskite/PEDOT solar cells in a regular n-i-p architectural design. / Koushik, D.; Verhees, W.J.H.; Zhang, D.; Kuang, Y.; Veenstra, S.; Creatore, M.; Schropp, R.E.I.

In: Advanced Materials Interfaces, Vol. 4, No. 18, 1700043 , 22.09.2017.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Atomic layer deposition enabled perovskite/PEDOT solar cells in a regular n-i-p architectural design

AU - Koushik, D.

AU - Verhees, W.J.H.

AU - Zhang, D.

AU - Kuang, Y.

AU - Veenstra, S.

AU - Creatore, M.

AU - Schropp, R.E.I.

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AB - Perovskite solar cells employing poly(3,4-ethylenedioxythiophene) (PEDOT) as hole transport layer on top of methylammonium lead halide are reported, yielding a power conversion efficiency of 11% and a 6% stabilized power output. An atomic layer deposition assisted interface architectural approach is adopted to fabricate the n–i–p perovskite/PEDOT devices. The results present a promising next step toward efficient low-cost perovskite-based photovoltaic technology.

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M3 - Article

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JO - Advanced Materials Interfaces

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SN - 2196-7350

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