Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3

W.M.M. Kessels, G. Dingemans, B. Hoex, L.R.J.G. van den Elzen, M.C.M. Sanden, van de

Research output: Contribution to conferenceOtherAcademic

Abstract

No abstract.
Original languageEnglish
Number of pages18
Publication statusPublished - 2009
Eventconference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27 -
Duration: 27 Aug 200927 Aug 2009

Conference

Conferenceconference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27
Period27/08/0927/08/09
OtherWorkshop on Silicon Dry Processing for Nanoelectronics and Micromechanics

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    Kessels, W. M. M., Dingemans, G., Hoex, B., van den Elzen, L. R. J. G., & Sanden, van de, M. C. M. (2009). Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3. conference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27, .