Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3

W.M.M. Kessels; G. Dingemans; B. Hoex; L.R.J.G. van den Elzen; M.C.M. Sanden, van de

Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3

W.M.M. Kessels, G. Dingemans, B. Hoex, L.R.J.G. van den Elzen, M.C.M. Sanden, van de

Research output: Contribution to conference › Other › Academic

Abstract

No abstract.

Original language	English
Number of pages	18
Publication status	Published - 2009
Event	conference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27 - Duration: 27 Aug 2009 → 27 Aug 2009

Conference

Conference	conference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27
Period	27/08/09 → 27/08/09
Other	Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics

Cite this

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title = "Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3",

abstract = "No abstract.",

author = "W.M.M. Kessels and G. Dingemans and B. Hoex and {van den Elzen}, L.R.J.G. and {Sanden, van de}, M.C.M.",

year = "2009",

language = "English",

note = "conference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27 ; Conference date: 27-08-2009 Through 27-08-2009",

}

TY - CONF

T1 - Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3

AU - Kessels, W.M.M.

AU - Dingemans, G.

AU - Hoex, B.

AU - van den Elzen, L.R.J.G.

AU - Sanden, van de, M.C.M.

PY - 2009

Y1 - 2009

N2 - No abstract.

AB - No abstract.

M3 - Other

T2 - conference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27

Y2 - 27 August 2009 through 27 August 2009

ER -

Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3

Abstract

Conference

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