Atomic-layer deposited passivation schemes for c-Si solar cells

Bas W.H. van de Loo; Bart Macco; Jimmy Melskens; Marcel A. Verheijen; W.M.M.Erwin Kessels

doi:10.1109/PVSC.2017.8366874

Atomic-layer deposited passivation schemes for c-Si solar cells

Bas W.H. van de Loo, Bart Macco, Jimmy Melskens, Marcel A. Verheijen, W.M.M.Erwin Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al₂O₃, various other novel passivation schemes have recently been developed, such as Ga₂O₃, Ta₂O₅, SiO₂/Al₂O₃, HfO₂/Al₂O₃ and TiO₂, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-6
Number of pages	6
ISBN (Electronic)	978-1-5090-5605-7
ISBN (Print)	978-1-5090-5606-4
DOIs	https://doi.org/10.1109/PVSC.2017.8366874
Publication status	Published - 25 May 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 Conference number: 44

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Abbreviated title	PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

Keywords

Charge carrier lifetime
Contacts
Crystalline silicon
Photovoltaic cells
Surface passivation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2017.8366874

Cite this

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title = "Atomic-layer deposited passivation schemes for c-Si solar cells",

abstract = "A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.",

keywords = "Charge carrier lifetime, Contacts, Crystalline silicon, Photovoltaic cells, Surface passivation",

author = "{van de Loo}, {Bas W.H.} and Bart Macco and Jimmy Melskens and Verheijen, {Marcel A.} and W.M.M.Erwin Kessels",

year = "2018",

month = may,

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doi = "10.1109/PVSC.2017.8366874",

language = "English",

isbn = "978-1-5090-5606-4",

pages = "1--6",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "44th IEEE Photovoltaic Specialist Conference, PVSC 2017, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

}

van de Loo, BWH, Macco, B, Melskens, J, Verheijen, MA & Kessels, WMME 2018, Atomic-layer deposited passivation schemes for c-Si solar cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-6, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, District of Columbia, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366874

Atomic-layer deposited passivation schemes for c-Si solar cells. / van de Loo, Bas W.H.; Macco, Bart; Melskens, Jimmy et al.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Piscataway : Institute of Electrical and Electronics Engineers, 2018. p. 1-6.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Atomic-layer deposited passivation schemes for c-Si solar cells

AU - van de Loo, Bas W.H.

AU - Macco, Bart

AU - Melskens, Jimmy

AU - Verheijen, Marcel A.

AU - Kessels, W.M.M.Erwin

N1 - Conference code: 44

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N2 - A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

AB - A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

KW - Charge carrier lifetime

KW - Contacts

KW - Crystalline silicon

KW - Photovoltaic cells

KW - Surface passivation

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DO - 10.1109/PVSC.2017.8366874

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ER -

Atomic-layer deposited passivation schemes for c-Si solar cells

Abstract

Conference

Keywords

UN SDGs

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