Atomic-layer deposited passivation schemes for c-Si solar cells

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Abstract

A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-6
Number of pages6
ISBN (Electronic)978-1-5090-5605-7
ISBN (Print)978-1-5090-5606-4
DOIs
Publication statusPublished - 25 May 2018
Event44th IEEE Photovoltaic Specialist Conference (PVSC 2017) - Washington, United States
Duration: 25 Jun 201730 Jun 2017
Conference number: 44

Conference

Conference44th IEEE Photovoltaic Specialist Conference (PVSC 2017)
Abbreviated titlePVSC 2017
CountryUnited States
CityWashington
Period25/06/1730/06/17

Keywords

  • Charge carrier lifetime
  • Contacts
  • Crystalline silicon
  • Photovoltaic cells
  • Surface passivation

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