Atomic-layer deposited passivation schemes for c-Si solar cells

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Abstract

A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers
Pages3655-3660
Number of pages6
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference (PVSC 2016) - Oregon Convention Center, Portland, United States
Duration: 5 Jun 201610 Jun 2016
Conference number: 43
https://www.ieee-pvsc.org/PVSC43/

Conference

Conference43rd IEEE Photovoltaic Specialists Conference (PVSC 2016)
Abbreviated titlePVSC 2016
CountryUnited States
CityPortland
Period5/06/1610/06/16
Internet address

Keywords

  • charge carrier lifetime
  • contacts
  • crystalline silicon
  • photovoltaic cells
  • surface passivation

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