Atom lithography with two-dimensional optical masks

S.J.H Petra, K.A.H. Leeuwen, van, L. Feenstra, W. Hogervorst, W. Vassen

    Research output: Contribution to journalArticleAcademicpeer-review

    11 Citations (Scopus)

    Abstract

    With a two-dimensional (2D) optical mask at =1083 nm, nanoscale patterns are created for the first time in an atom lithography process using metastable helium atoms. The internal energy of the atoms is used to locally damage a hydrophobic resist layer, which is removed in a wet etching process. Experiments have been performed with several polarizations for the optical mask, resulting in different intensity patterns, and corresponding nanoscale structures. The results for a linear polarized light field show an array of holes with a diameter of 260 nm, in agreement with a computed pattern. With a circularly polarized light field a line pattern is observed with a spacing of /20.5=766 nm. Simulations taking into account many possible experimental imperfections can not explain this pattern.
    Original languageEnglish
    Pages (from-to)279-283
    JournalApplied Physics B: Lasers and Optics
    VolumeB79
    Issue number3
    DOIs
    Publication statusPublished - 2004

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