Atmospheric spatial atomic layer deposition of In-doped ZnO

A. Illiberi; R. Scherpenborg; F. Roozeboom; P. Poodt

doi:10.1149/2.002405jss

Atmospheric spatial atomic layer deposition of In-doped ZnO

A. Illiberi, R. Scherpenborg, F. Roozeboom, P. Poodt

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Abstract

Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm-3), low resistivity (3 mO·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (<7 mO·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).

Original language	English
Pages (from-to)	111-114
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/2.002405jss
Publication status	Published - 2014
Externally published	Yes
Event	224th Electrochemical Society Meeting (ECS 2013) - San Francisco, United States Duration: 27 Oct 2013 → 1 Nov 2013 Conference number: 224

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title = "Atmospheric spatial atomic layer deposition of In-doped ZnO",

abstract = "Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm-3), low resistivity (3 mO·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (<7 mO·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).",

author = "A. Illiberi and R. Scherpenborg and F. Roozeboom and P. Poodt",

year = "2014",

doi = "10.1149/2.002405jss",

language = "English",

volume = "3",

pages = "111--114",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "5",

note = "224th Electrochemical Society Meeting (ECS 2013), ECS 2013 ; Conference date: 27-10-2013 Through 01-11-2013",

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TY - JOUR

T1 - Atmospheric spatial atomic layer deposition of In-doped ZnO

AU - Illiberi, A.

AU - Scherpenborg, R.

AU - Roozeboom, F.

AU - Poodt, P.

N1 - Conference code: 224

PY - 2014

Y1 - 2014

N2 - Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm-3), low resistivity (3 mO·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (<7 mO·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).

AB - Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm-3), low resistivity (3 mO·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (<7 mO·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).

U2 - 10.1149/2.002405jss

DO - 10.1149/2.002405jss

M3 - Article

VL - 3

SP - 111

EP - 114

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 5

T2 - 224th Electrochemical Society Meeting (ECS 2013)

Y2 - 27 October 2013 through 1 November 2013

ER -

Atmospheric spatial atomic layer deposition of In-doped ZnO

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