Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck; Andrea Llliberi; Llias Katsouras; Willem Van Boekel; Corné Frijters; Joris Maas; Fred Roozeboom; Yves Creyghton; Paul Poodt

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck
, Andrea Llliberi
, Llias Katsouras
, Willem Van Boekel
, Corné Frijters
, Joris Maas
, Fred Roozeboom
, Yves Creyghton
, Paul Poodt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm²/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

Original language	English
Title of host publication	24th International Display Workshops, IDW 2017
Publisher	International Display Workshops
Pages	1484-1486
Number of pages	3
Volume	2
ISBN (Electronic)	9781510858992
Publication status	Published - 1 Jan 2017
Event	24th International Display Workshops (IDW 2017) - Sendai, Japan Duration: 6 Dec 2017 → 8 Dec 2017 Conference number: 24

Conference

Conference	24th International Display Workshops (IDW 2017)
Abbreviated title	IDW 2017
Country/Territory	Japan
City	Sendai
Period	6/12/17 → 8/12/17

Keywords

Amorphous metal oxide semiconductor
Atmospheric atomic layer deposition
High mobility
Thin-film transistor

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{8f98a2e50ce149cd94905500bdf134f8,

title = "Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors",

abstract = "Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.",

keywords = "Amorphous metal oxide semiconductor, Atmospheric atomic layer deposition, High mobility, Thin-film transistor",

author = "Gerwin Gelinck and Andrea Llliberi and Llias Katsouras and \{Van Boekel\}, Willem and Corn{\'e} Frijters and Joris Maas and Fred Roozeboom and Yves Creyghton and Paul Poodt",

year = "2017",

month = jan,

day = "1",

language = "English",

volume = "2",

pages = "1484--1486",

booktitle = "24th International Display Workshops, IDW 2017",

publisher = "International Display Workshops",

note = "24th International Display Workshops (IDW 2017), IDW 2017 ; Conference date: 06-12-2017 Through 08-12-2017",

}

Gelinck, G, Llliberi, A, Katsouras, L, Van Boekel, W, Frijters, C, Maas, J, Roozeboom, F, Creyghton, Y & Poodt, P 2017, Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors. in 24th International Display Workshops, IDW 2017. vol. 2, International Display Workshops, pp. 1484-1486, 24th International Display Workshops (IDW 2017), Sendai, Japan, 6/12/17.

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors. / Gelinck, Gerwin; Llliberi, Andrea; Katsouras, Llias et al.
24th International Display Workshops, IDW 2017. Vol. 2 International Display Workshops, 2017. p. 1484-1486.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

AU - Gelinck, Gerwin

AU - Llliberi, Andrea

AU - Katsouras, Llias

AU - Van Boekel, Willem

AU - Frijters, Corné

AU - Maas, Joris

AU - Roozeboom, Fred

AU - Creyghton, Yves

AU - Poodt, Paul

N1 - Conference code: 24

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

AB - Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

KW - Amorphous metal oxide semiconductor

KW - Atmospheric atomic layer deposition

KW - High mobility

KW - Thin-film transistor

UR - https://www.scopus.com/pages/publications/85056163449

M3 - Conference contribution

AN - SCOPUS:85056163449

VL - 2

SP - 1484

EP - 1486

BT - 24th International Display Workshops, IDW 2017

PB - International Display Workshops

T2 - 24th International Display Workshops (IDW 2017)

Y2 - 6 December 2017 through 8 December 2017

ER -

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Abstract

Conference

Keywords

UN SDGs

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