Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck; Andrea Llliberi; Llias Katsouras; Willem Van Boekel; Corné Frijters; Joris Maas; Fred Roozeboom; Yves Creyghton; Paul Poodt

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck, Andrea Llliberi, Llias Katsouras, Willem Van Boekel, Corné Frijters, Joris Maas, Fred Roozeboom, Yves Creyghton, Paul Poodt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm²/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

Original language	English
Title of host publication	24th International Display Workshops, IDW 2017
Publisher	International Display Workshops
Pages	1484-1486
Number of pages	3
Volume	2
ISBN (Electronic)	9781510858992
Publication status	Published - 1 Jan 2017
Event	24th International Display Workshops (IDW 2017) - Sendai, Japan Duration: 6 Dec 2017 → 8 Dec 2017 Conference number: 24

Conference

Conference	24th International Display Workshops (IDW 2017)
Abbreviated title	IDW 2017
Country/Territory	Japan
City	Sendai
Period	6/12/17 → 8/12/17

Keywords

Amorphous metal oxide semiconductor
Atmospheric atomic layer deposition
High mobility
Thin-film transistor

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors",

abstract = "Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.",

keywords = "Amorphous metal oxide semiconductor, Atmospheric atomic layer deposition, High mobility, Thin-film transistor",

author = "Gerwin Gelinck and Andrea Llliberi and Llias Katsouras and {Van Boekel}, Willem and Corn{\'e} Frijters and Joris Maas and Fred Roozeboom and Yves Creyghton and Paul Poodt",

year = "2017",

month = jan,

day = "1",

language = "English",

volume = "2",

pages = "1484--1486",

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Gelinck, G, Llliberi, A, Katsouras, L, Van Boekel, W, Frijters, C, Maas, J, Roozeboom, F, Creyghton, Y & Poodt, P 2017, Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors. in 24th International Display Workshops, IDW 2017. vol. 2, International Display Workshops, pp. 1484-1486, 24th International Display Workshops (IDW 2017), Sendai, Japan, 6/12/17.

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors. / Gelinck, Gerwin; Llliberi, Andrea; Katsouras, Llias; Van Boekel, Willem; Frijters, Corné; Maas, Joris; Roozeboom, Fred; Creyghton, Yves; Poodt, Paul.

24th International Display Workshops, IDW 2017. Vol. 2 International Display Workshops, 2017. p. 1484-1486.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

AU - Gelinck, Gerwin

AU - Llliberi, Andrea

AU - Katsouras, Llias

AU - Van Boekel, Willem

AU - Frijters, Corné

AU - Maas, Joris

AU - Roozeboom, Fred

AU - Creyghton, Yves

AU - Poodt, Paul

N1 - Conference code: 24

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

AB - Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

KW - Amorphous metal oxide semiconductor

KW - Atmospheric atomic layer deposition

KW - High mobility

KW - Thin-film transistor

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M3 - Conference contribution

AN - SCOPUS:85056163449

VL - 2

SP - 1484

EP - 1486

BT - 24th International Display Workshops, IDW 2017

PB - International Display Workshops

T2 - 24th International Display Workshops (IDW 2017)

Y2 - 6 December 2017 through 8 December 2017

ER -

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Abstract

Conference

Keywords

UN SDGs

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