Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck, Andrea Llliberi, Llias Katsouras, Willem Van Boekel, Corné Frijters, Joris Maas, Fred Roozeboom, Yves Creyghton, Paul Poodt

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

Original languageEnglish
Title of host publication24th International Display Workshops, IDW 2017
PublisherInternational Display Workshops
Pages1484-1486
Number of pages3
Volume2
ISBN (Electronic)9781510858992
Publication statusPublished - 1 Jan 2017
Event24th International Display Workshops, (IDW2017) - Sendai, Japan
Duration: 6 Dec 20178 Dec 2017

Conference

Conference24th International Display Workshops, (IDW2017)
Abbreviated titleIDW2017
CountryJapan
CitySendai
Period6/12/178/12/17

Keywords

  • Amorphous metal oxide semiconductor
  • Atmospheric atomic layer deposition
  • High mobility
  • Thin-film transistor

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