Abstract
Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.
Original language | English |
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Title of host publication | 24th International Display Workshops, IDW 2017 |
Publisher | International Display Workshops |
Pages | 1484-1486 |
Number of pages | 3 |
Volume | 2 |
ISBN (Electronic) | 9781510858992 |
Publication status | Published - 1 Jan 2017 |
Event | 24th International Display Workshops (IDW 2017) - Sendai, Japan Duration: 6 Dec 2017 → 8 Dec 2017 Conference number: 24 |
Conference
Conference | 24th International Display Workshops (IDW 2017) |
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Abbreviated title | IDW 2017 |
Country/Territory | Japan |
City | Sendai |
Period | 6/12/17 → 8/12/17 |
Keywords
- Amorphous metal oxide semiconductor
- Atmospheric atomic layer deposition
- High mobility
- Thin-film transistor