Atmospheric pressure plasma enhanced spatial ALD of ZrO2 for low-temperature, large-area applications

Maria A. Mione, Ilias Katsouras, Yves Creyghton, Willem Van Boekel, Joris Maas, Gerwin Gelinck, Fred Roozeboom, Andrea Illiberi

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Abstract

High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates and uses atmospheric-pressure plasma to activate surface reactions at lower temperatures. We used tetrakis(ethylmethylamino)zirconium (TEMAZ) as precursor and O2 plasma as co-reactant at temperatures between 150 and 250C. Deposition rates as high as 0.17 nm/cycle were achieved with N- and C- contents as low as 0.4% and 1.5%, respectively. Growth rate, film crystallinity and impurity contents in the films were found to improve with increasing deposition temperature. The measured relative permittivity lying between 18 and 28 with leakage currents in the order of 5 × 10−8 A/cm2 demonstrates that atmospheric PE-sALD is a powerful technique to deposit ultrathin, high-quality dielectrics for low-temperature, large-scale microelectronic applications.

Original languageEnglish
Pages (from-to)N243-N249
Number of pages7
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number12
Early online date23 Dec 2017
DOIs
Publication statusPublished - Dec 2017

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