Atmospheric pressure plasma enhanced spatial ALD of silver

F.J. Bruele, van den, M. Smets, A. Illiberi, Y.L.M. Creijghton, P. Buskens, F. Roozeboom, P. Poodt

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Abstract

The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18¿µO cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120¿°C.
Original languageEnglish
Article number01A131
Pages (from-to)01A131
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume33
DOIs
Publication statusPublished - 2015

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    Bruele, van den, F. J., Smets, M., Illiberi, A., Creijghton, Y. L. M., Buskens, P., Roozeboom, F., & Poodt, P. (2015). Atmospheric pressure plasma enhanced spatial ALD of silver. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 33, 01A131. [01A131]. https://doi.org/10.1116/1.4902561