Atmospheric pressure plasma enhanced spatial ALD of silver

F.J. Bruele, van den; M. Smets; A. Illiberi; Y.L.M. Creijghton; P. Buskens; F. Roozeboom; P. Poodt

doi:10.1116/1.4902561

Atmospheric pressure plasma enhanced spatial ALD of silver

F.J. Bruele, van den, M. Smets, A. Illiberi, Y.L.M. Creijghton, P. Buskens, F. Roozeboom, P. Poodt

Plasma & Materials Processing

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Abstract

The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18¿µO cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120¿°C.

Original language	English
Article number	01A131
Pages (from-to)	01A131
Number of pages	7
Journal	Journal of Vacuum Science and Technology A
Volume	33
DOIs	https://doi.org/10.1116/1.4902561
Publication status	Published - 2015

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title = "Atmospheric pressure plasma enhanced spatial ALD of silver",

abstract = "The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18¿µO cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120¿°C.",

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T1 - Atmospheric pressure plasma enhanced spatial ALD of silver

AU - Bruele, van den, F.J.

AU - Smets, M.

AU - Illiberi, A.

AU - Creijghton, Y.L.M.

AU - Buskens, P.

AU - Roozeboom, F.

AU - Poodt, P.

PY - 2015

Y1 - 2015

N2 - The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18¿µO cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120¿°C.

AB - The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18¿µO cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120¿°C.

U2 - 10.1116/1.4902561

DO - 10.1116/1.4902561

M3 - Article

SN - 0734-2101

VL - 33

SP - 01A131

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

M1 - 01A131

ER -

Atmospheric pressure plasma enhanced spatial ALD of silver

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