Abstract
| Original language | English |
|---|---|
| Article number | 04F401 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films |
| Volume | 36 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 14 Feb 2018 |
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Atmospheric plasma-enhanced spatial-ALD of lnZnO for high mobility thin film transistors. / Illiberi, Andrea; Katsouras, I.; Gazibegovic, S.; Cobb, B.; Nekovic, E.; van Boekel, W.; Frijters, C.H.; Maas, J.; Roozeboom, F.; Creyghton, Yves L.M.; Poodt, P.; Gelinck, G.H.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, Vol. 36, No. 4, 04F401, 14.02.2018.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Atmospheric plasma-enhanced spatial-ALD of lnZnO for high mobility thin film transistors
AU - Illiberi, Andrea
AU - Katsouras, I.
AU - Gazibegovic, S.
AU - Cobb, B.
AU - Nekovic, E.
AU - van Boekel, W.
AU - Frijters, C.H.
AU - Maas, J.
AU - Roozeboom, F.
AU - Creyghton, Yves L.M.
AU - Poodt, P.
AU - Gelinck, G.H.
PY - 2018/2/14
Y1 - 2018/2/14
N2 - In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In + Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.
AB - In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In + Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.
U2 - 10.1116/1.5008464
DO - 10.1116/1.5008464
M3 - Article
VL - 36
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
SN - 0734-2101
IS - 4
M1 - 04F401
ER -