Asymmetric split-gate ambipolar transistor and its circuit application to complementary inverter

H. Yoo , E.C.P. Smits, A.J.J.M. van Breemen, J.L. van der Steen, F. Torricelli, M. Ghittorelli, J. Lee, G. Gelinck, J.-J. Kim

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.
Original languageEnglish
Article number1600044
Pages (from-to)1-6
JournalAdvanced Materials Technologies
Volume1
Issue number4
DOIs
Publication statusPublished - 17 May 2016

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