Asymmetric split-gate ambipolar transistor and its circuit application to complementary inverter

H. Yoo; E.C.P. Smits; A.J.J.M. van Breemen; J.L. van der Steen; F. Torricelli; M. Ghittorelli; J. Lee; G. Gelinck; J.-J. Kim

doi:10.1002/admt.201600044

Asymmetric split-gate ambipolar transistor and its circuit application to complementary inverter

H. Yoo , E.C.P. Smits, A.J.J.M. van Breemen, J.L. van der Steen, F. Torricelli, M. Ghittorelli, J. Lee, G. Gelinck, J.-J. Kim

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

Abstract

Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.

Original language	English
Article number	1600044
Pages (from-to)	1-6
Journal	Advanced Materials Technologies
Volume	1
Issue number	4
DOIs	https://doi.org/10.1002/admt.201600044
Publication status	Published - 17 May 2016

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title = "Asymmetric split-gate ambipolar transistor and its circuit application to complementary inverter",

abstract = "Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain. ",

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AU - Yoo , H.

AU - Smits, E.C.P.

AU - van Breemen, A.J.J.M.

AU - van der Steen, J.L.

AU - Torricelli, F.

AU - Ghittorelli, M.

AU - Lee, J.

AU - Gelinck, G.

AU - Kim, J.-J.

PY - 2016/5/17

Y1 - 2016/5/17

N2 - Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.

AB - Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.

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DO - 10.1002/admt.201600044

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JO - Advanced Materials Technologies

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Asymmetric split-gate ambipolar transistor and its circuit application to complementary inverter

Abstract

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