Asymmetric chemical functionalization of top‐contact electrodes: tuning the charge injection for high‐performance MoS2 field‐effect transistors and schottky diodes

Bin Han; Yuda Zhao; Chun Ma; Can Wang; Xinzi Tian; Ye Wang; Wenping Hu; Paolo Samorì

doi:10.1002/adma.202109445

Asymmetric chemical functionalization of top‐contact electrodes: tuning the charge injection for high‐performance MoS2 field‐effect transistors and schottky diodes

Bin Han
, Yuda Zhao
, Chun Ma
, Can Wang
, Xinzi Tian
, Ye Wang
, Wenping Hu
, Paolo Samorì (Corresponding author)

Research output: Contribution to journal › Article › Academic › peer-review

Original language	English
Article number	2109445
Journal	Advanced Materials
Volume	34
Issue number	12
DOIs	https://doi.org/10.1002/adma.202109445
Publication status	Published - 2022
Externally published	Yes

Access to Document

10.1002/adma.202109445

Cite this

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title = "Asymmetric chemical functionalization of top‐contact electrodes: tuning the charge injection for high‐performance MoS2 field‐effect transistors and schottky diodes",

author = "Bin Han and Yuda Zhao and Chun Ma and Can Wang and Xinzi Tian and Ye Wang and Wenping Hu and Paolo Samor{\`i}",

year = "2022",

doi = "10.1002/adma.202109445",

language = "English",

volume = "34",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "12",

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T1 - Asymmetric chemical functionalization of top‐contact electrodes: tuning the charge injection for high‐performance MoS2 field‐effect transistors and schottky diodes

AU - Han, Bin

AU - Zhao, Yuda

AU - Ma, Chun

AU - Wang, Can

AU - Tian, Xinzi

AU - Wang, Ye

AU - Hu, Wenping

AU - Samorì, Paolo

PY - 2022

Y1 - 2022

U2 - 10.1002/adma.202109445

DO - 10.1002/adma.202109445

M3 - Article

SN - 0935-9648

VL - 34

JO - Advanced Materials

JF - Advanced Materials

IS - 12

M1 - 2109445

ER -