Asymmetric bias voltage dependence of the magnetoresistance of Co/Al2O3/Co magnetic tunnel junctions: Variation with the barrier oxidation time

W. Oepts, M.F. Gillies, R. Coehoorn, R.J.M. Veerdonk, van de, W.J.M. Jonge, de

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Abstract

Recently it has been observed that the magnetoresistance (MR) of plasma oxidized exchange biased Co/Al2O3/Co tunnel junctions can have a strongly asymmetric bias voltage (Vbias) dependence. In this article we report on the dependence of this phenomenon on barrier oxidation time tox. For junctions based on 1.5 nm Al, tox was varied from 20 to 120 s. For tox = 20 s, for which the MR is approximately 20% at Vbias = 0, and for tox = 90 s symmetric MR(Vbias) curves are found, with the MR decreasing monotonically with |Vbias|. A strong asymmetric bias voltage dependence was observed for intermediate oxidation times, which correspond to essentially full oxidation of the Al layer, but almost no formation of stoichiometric CoO at the bottom electrode. Samples with tox = 60 s show even an asymmetric double peak in MR(Vbias). Due to its strength, it has an important consequence for device applications: for a series of junctions with variable tox the maximum signal voltage (at a fixed current) is not necessarily obtained for junctions which have the largest MR ratio at Vbias = 0. ©2001 American Institute of Physics.
Original languageEnglish
Pages (from-to)8038-8045
JournalJournal of Applied Physics
Volume89
Issue number12
DOIs
Publication statusPublished - 2001

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