Abstract
Arsenic-doped silicon thermometers using ion implantation techniques are described for low-temperature applications such as bolometry, microcalorimetry, transient heat transfer measurements etc. Ion-implanted thermistors have the advantage of very small heat capacity and fast response. A very fine interdigital structure (5 μm characteristic dimension) was defined in the plane photolithographically. In this way, the geometric factor (= resistance-resistivity ratio) is reduced and the useful range extended. The nominal concentrations of the arsenic were chosen around the concentration of the metal-insulator transition (8.5·1018 atoms cm-3) in the range from 6.4 to 9.7·1018 atoms cm-3. Both metallic and semiconducting behaviour was observed. The electrical resistance measurements between 30 and 1 K show that the thermistors are highly temperature sensitive with |d(logR)/d(logT)|>5 and reproducible after thermal cyclings between room temperature and liquid-helium temperatures. The current-voltage characteristic is strongly nonlinear, which is attributed to an intrinsic electric field effect.
Original language | English |
---|---|
Title of host publication | Advances in Cryogenic Engineering |
Editors | R.W. Fast |
Publisher | Plenum Press |
Pages | 1551-1556 |
Number of pages | 6 |
Volume | 35, part B |
ISBN (Electronic) | 978-1-4613-0639-9 |
ISBN (Print) | 0306435977, 978-0-306-43597-3, 978-1-4612-7904-4 |
Publication status | Published - 1990 |
Event | Proceedings of the 1989 Cryogenic Engineering Conference. Part 2 (of 2) - Los Angeles, CA, USA Duration: 24 Jul 1989 → 28 Jul 1989 |
Conference
Conference | Proceedings of the 1989 Cryogenic Engineering Conference. Part 2 (of 2) |
---|---|
City | Los Angeles, CA, USA |
Period | 24/07/89 → 28/07/89 |