Arsenic ion-implanted silicon thermometer

Chen Gang, R.W. van der Heijden, A.T.A.M. de Waele, H.M. Gijsman, C.M. van Es, F.P.B. Tielen

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

1 Citation (Scopus)

Abstract

Arsenic-doped silicon thermometers using ion implantation techniques are described for low-temperature applications such as bolometry, microcalorimetry, transient heat transfer measurements etc. Ion-implanted thermistors have the advantage of very small heat capacity and fast response. A very fine interdigital structure (5 μm characteristic dimension) was defined in the plane photolithographically. In this way, the geometric factor (= resistance-resistivity ratio) is reduced and the useful range extended. The nominal concentrations of the arsenic were chosen around the concentration of the metal-insulator transition (8.5·1018 atoms cm-3) in the range from 6.4 to 9.7·1018 atoms cm-3. Both metallic and semiconducting behaviour was observed. The electrical resistance measurements between 30 and 1 K show that the thermistors are highly temperature sensitive with |d(logR)/d(logT)|>5 and reproducible after thermal cyclings between room temperature and liquid-helium temperatures. The current-voltage characteristic is strongly nonlinear, which is attributed to an intrinsic electric field effect.

Original languageEnglish
Title of host publicationAdvances in Cryogenic Engineering
EditorsR.W. Fast
PublisherPlenum Press
Pages1551-1556
Number of pages6
Volume35, part B
ISBN (Electronic)978-1-4613-0639-9
ISBN (Print)0306435977, 978-0-306-43597-3, 978-1-4612-7904-4
Publication statusPublished - 1990
EventProceedings of the 1989 Cryogenic Engineering Conference. Part 2 (of 2) - Los Angeles, CA, USA
Duration: 24 Jul 198928 Jul 1989

Conference

ConferenceProceedings of the 1989 Cryogenic Engineering Conference. Part 2 (of 2)
CityLos Angeles, CA, USA
Period24/07/8928/07/89

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