Arsenic ion-implanted silicon thermometer

Chen Gang, R.W. van der Heijden, A.T.A.M. de Waele, H.M. Gijsman, C.M. van Es, F.P.B. Tielen

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

1 Citation (Scopus)


Arsenic-doped silicon thermometers using ion implantation techniques are described for low-temperature applications such as bolometry, microcalorimetry, transient heat transfer measurements etc. Ion-implanted thermistors have the advantage of very small heat capacity and fast response. A very fine interdigital structure (5 μm characteristic dimension) was defined in the plane photolithographically. In this way, the geometric factor (= resistance-resistivity ratio) is reduced and the useful range extended. The nominal concentrations of the arsenic were chosen around the concentration of the metal-insulator transition (8.5·1018 atoms cm-3) in the range from 6.4 to 9.7·1018 atoms cm-3. Both metallic and semiconducting behaviour was observed. The electrical resistance measurements between 30 and 1 K show that the thermistors are highly temperature sensitive with |d(logR)/d(logT)|>5 and reproducible after thermal cyclings between room temperature and liquid-helium temperatures. The current-voltage characteristic is strongly nonlinear, which is attributed to an intrinsic electric field effect.

Original languageEnglish
Title of host publicationAdvances in Cryogenic Engineering
EditorsR.W. Fast
PublisherPlenum Press
Number of pages6
Volume35, part B
ISBN (Electronic)978-1-4613-0639-9
ISBN (Print)0306435977, 978-0-306-43597-3, 978-1-4612-7904-4
Publication statusPublished - 1990
EventProceedings of the 1989 Cryogenic Engineering Conference. Part 2 (of 2) - Los Angeles, CA, USA
Duration: 24 Jul 198928 Jul 1989


ConferenceProceedings of the 1989 Cryogenic Engineering Conference. Part 2 (of 2)
CityLos Angeles, CA, USA


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