Area-selective atomic layer deposition: Role of surface chemistry

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Abstract

Area-selective atomic layer deposition is being considered as the next paradigm shift in device fabrication. Besides semiconductor manufacturing, area-selective ALD presents unique opportunities in catalysis and large-area electronics applications. In this contribution, the results of recently developed area-selective ALD processes for In2O3 and ZnO are revisited. These approaches rely on substratedependent nucleation that originates from chemoselective precursor adsorption. Here, we focus on the role of thermodynamics and kinetics of the surface reactions in enabling area-selective deposition. Thermodynamics and kinetics of reactions were calculated by density functional theory (DFT) methods. We believe that our findings can be valuable in understanding area-selective ALD processes at a molecular level, the mechanisms underpinning the chemoselective adsorption and thus in advancing the field.

Original languageEnglish
Title of host publicationECS Transactions
EditorsStefan De Gendt, Jolien Dendooven, Fred Roozeboom, Chanyuan Liu, Jeffrey W. Elam, Oscar van der Straten
PublisherElectrochemical Society, Inc.
Pages39-48
Number of pages10
Volume80
Edition3
ISBN (Electronic)9781607685395
ISBN (Print)978-1-62332-472-8
DOIs
Publication statusPublished - 1 Jan 2017
Event13th Symposium on Atomic Layer Deposition Applications, ALD 2017- 232nd ECS Meeting - National Harbor, United States
Duration: 1 Oct 20175 Oct 2017

Publication series

NameECS Transactions
Number3
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference13th Symposium on Atomic Layer Deposition Applications, ALD 2017- 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period1/10/175/10/17

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