Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation

J. (Joseph) Singh, N.F.W. Thissen, W.-H. Kim, H. Johnson, W.M.M. Kessels, A.A. Bol, S.F. Bent, A.J.M. Mackus

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Abstract

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.
LanguageEnglish
Pages663–670
Number of pages8
JournalChemistry of Materials
Volume30
Issue number3
Early online date1 Dec 2017
DOIs
StatePublished - 2018

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Atomic layer deposition
Precious metals
Oxides
Metals
Chemical activation
Oxygen
Substrates
Iridium
Nickel oxide
Spectroscopic ellipsometry
Auger electron spectroscopy
Platinum
Iron oxides
Oxidants
Catalysis
X ray photoelectron spectroscopy
Gases
Semiconductor materials
Nanoparticles
Transmission electron microscopy

Cite this

Singh, J. (Joseph) ; Thissen, N.F.W. ; Kim, W.-H. ; Johnson, H. ; Kessels, W.M.M. ; Bol, A.A. ; Bent, S.F. ; Mackus, A.J.M./ Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation. In: Chemistry of Materials. 2018 ; Vol. 30, No. 3. pp. 663–670
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abstract = "Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.",
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Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation. / Singh, J. (Joseph); Thissen, N.F.W.; Kim, W.-H.; Johnson, H.; Kessels, W.M.M.; Bol, A.A.; Bent, S.F.; Mackus, A.J.M.

In: Chemistry of Materials, Vol. 30, No. 3, 2018, p. 663–670.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation

AU - Singh,J. (Joseph)

AU - Thissen,N.F.W.

AU - Kim,W.-H.

AU - Johnson,H.

AU - Kessels,W.M.M.

AU - Bol,A.A.

AU - Bent,S.F.

AU - Mackus,A.J.M.

PY - 2018

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N2 - Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.

AB - Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.

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