Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%

Atomic layer deposition (ALD) of thin Al2O3 (=10¿nm) films is used to improve the rear surface passivation of large-area screen-printed p-type Si passivated emitter and rear cells (PERC). A blister-free stack of Al2O3/SiOx/SiNx is developed, leading to an improved back reflection and a rear recombination current (J0,rear) of 92¿±¿6¿fA/cm2. The Al2O3/SiOx/SiNx stack is blister-free if a 700°C anneal in N2 is performed after the Al2O3 deposition and prior to the SiOx/SiNx capping. A clear relationship between blistering density and lower open-circuit voltage (VOC) due to increased rear contacting area is shown. In case of the blister-free Al2O3/SiOx/SiNx rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG-ISE CalLab. Compared with SiOx/SiNx-passivated PERC, there is an obvious gain in VOC and short-circuit current (JSC) of 5¿mV and 0.2¿mA/cm2, respectively, thanks to improved rear surface passivation and rear internal reflection.