Application of Ru-based gate materials for CMOS technology

M. Ťapajna, P. Písečny, R. Lupták, K. Hušeková, K. Fröhlich, L. Harmatha, J.C. Hooker, F. Roozeboom, J. Jergel

Research output: Contribution to journalArticleAcademicpeer-review

37 Citations (Scopus)

Abstract

Together with high-κ dielectric films, metal gate electrodes have to be employed in advanced CMOS technologies. The metal gate material should be carefully selected with respect to work function, stability of metal-dielectric stack and compatibility with the CMOS process. In our investigation, Ru, RuO2 and SrRuO3 gate electrodes grown on thermal SiO 2, atomic-layer deposition Al2O3 and HfO 2 dielectric films have been analyzed by means of high- and low-frequency capacitance-voltage measurement as well as current-voltage characteristics on MOS capacitors. Ru-based gate materials were prepared by metal-organic chemical vapor deposition at temperatures between 300 and 500°C. Work function of the investigated gate material, leakage current, density of effective defect charge as well as density of interface traps of the gate oxide film were extracted from the measurements. These properties are discussed with regard to application of Ru-based metal gates in CMOS technology.

Original languageEnglish
Pages (from-to)271-276
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume7
Issue number4-6
DOIs
Publication statusPublished - 10 Dec 2004
Externally publishedYes

Keywords

  • C-V and I-V measurement
  • CMOS technology
  • High-K oxides
  • Metal-organic chemical vapor deposition

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