Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

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Abstract

We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.
Original languageEnglish
Pages1-3
Number of pages3
Publication statusPublished - 25 Apr 2019
Event21st European Conference on Integrated Optics 2019 (ECIO2019) - Het Pand, Gent, Belgium
Duration: 24 Apr 201926 Apr 2019
Conference number: 21
https://www.ecio-2019.org/

Conference

Conference21st European Conference on Integrated Optics 2019 (ECIO2019)
Abbreviated titleECIO 2019
CountryBelgium
CityGent
Period24/04/1926/04/19
Internet address

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Cite this

Bolk, J., Ambrosius, H., Latkowski, S., Unal, N., Ritter, D., & Williams, K. (2019). Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. 1-3. Poster session presented at 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, Belgium.