Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

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Abstract

We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.
Original languageEnglish
Pages1-3
Number of pages3
Publication statusPublished - 25 Apr 2019
Event21st European Conference on Integrated Optics (ECIO 2019) - Het Pand, Ghent, Belgium
Duration: 24 Apr 201926 Apr 2019
Conference number: 21
https://www.ecio-2019.org/
http://www.ecio-conference.org

Conference

Conference21st European Conference on Integrated Optics (ECIO 2019)
Abbreviated titleECIO 2019
Country/TerritoryBelgium
CityGhent
Period24/04/1926/04/19
Internet address

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