Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

Research output: Contribution to conferencePosterAcademic

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Abstract

We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.
Original languageEnglish
Pages1-3
Number of pages3
Publication statusPublished - 25 Apr 2019
Event21st European Conference on Integrated Optics 2019 (ECIO2019) - Het Pand, Gent, Belgium
Duration: 24 Apr 201926 Apr 2019
Conference number: 21
https://www.ecio-2019.org/

Conference

Conference21st European Conference on Integrated Optics 2019 (ECIO2019)
Abbreviated titleECIO 2019
CountryBelgium
CityGent
Period24/04/1926/04/19
Internet address

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integrated circuits
proximity
lithography
photonics
simulation
gratings

Cite this

Bolk, J., Ambrosius, H., Latkowski, S., Unal, N., Ritter, D., & Williams, K. (2019). Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. 1-3. Poster session presented at 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, Belgium.
Bolk, Jeroen ; Ambrosius, Huub ; Latkowski, Sylwester ; Unal, Nezih ; Ritter, Daniel ; Williams, Kevin. / Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. Poster session presented at 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, Belgium.3 p.
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title = "Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits",
abstract = "We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70{\%} improved pattern fidelity.",
author = "Jeroen Bolk and Huub Ambrosius and Sylwester Latkowski and Nezih Unal and Daniel Ritter and Kevin Williams",
year = "2019",
month = "4",
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language = "English",
pages = "1--3",
note = "21st European Conference on Integrated Optics 2019 (ECIO2019), ECIO 2019 ; Conference date: 24-04-2019 Through 26-04-2019",
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Bolk, J, Ambrosius, H, Latkowski, S, Unal, N, Ritter, D & Williams, K 2019, 'Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits' 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, Belgium, 24/04/19 - 26/04/19, pp. 1-3.

Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. / Bolk, Jeroen; Ambrosius, Huub; Latkowski, Sylwester; Unal, Nezih; Ritter, Daniel; Williams, Kevin.

2019. 1-3 Poster session presented at 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, Belgium.

Research output: Contribution to conferencePosterAcademic

TY - CONF

T1 - Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

AU - Bolk, Jeroen

AU - Ambrosius, Huub

AU - Latkowski, Sylwester

AU - Unal, Nezih

AU - Ritter, Daniel

AU - Williams, Kevin

PY - 2019/4/25

Y1 - 2019/4/25

N2 - We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.

AB - We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.

M3 - Poster

SP - 1

EP - 3

ER -

Bolk J, Ambrosius H, Latkowski S, Unal N, Ritter D, Williams K. Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. 2019. Poster session presented at 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, Belgium.