Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab

P.A.M. Haagh; A.U. Wilkens; E.J.J. Campen, van; J.E. Rooda; H.J.A. Rulkens

Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab

P.A.M. Haagh, A.U. Wilkens, E.J.J. Campen, van, J.E. Rooda, H.J.A. Rulkens

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	Proceedings of ISSM '98, the 7th international symposium on semiconductor manufacturing : October 7-9, Tokyo, Japan
Editors	T. Kawanishi, T. Ohmi, H. Sasaki
Place of Publication	Tokyo
Publisher	Ultra Clean Technology
Pages	69-72
Publication status	Published - 1998

Cite this

Haagh, P. A. M., Wilkens, A. U., Campen, van, E. J. J., Rooda, J. E., & Rulkens, H. J. A. (1998). Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab. In T. Kawanishi, T. Ohmi, & H. Sasaki (Eds.), Proceedings of ISSM '98, the 7th international symposium on semiconductor manufacturing : October 7-9, Tokyo, Japan (pp. 69-72). Ultra Clean Technology.

Haagh, P.A.M. ; Wilkens, A.U. ; Campen, van, E.J.J. ; Rooda, J.E. ; Rulkens, H.J.A. / Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab. Proceedings of ISSM '98, the 7th international symposium on semiconductor manufacturing : October 7-9, Tokyo, Japan. editor / T. Kawanishi ; T. Ohmi ; H. Sasaki. Tokyo : Ultra Clean Technology, 1998. pp. 69-72

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title = "Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab",

author = "P.A.M. Haagh and A.U. Wilkens and {Campen, van}, E.J.J. and J.E. Rooda and H.J.A. Rulkens",

year = "1998",

language = "English",

pages = "69--72",

editor = "T. Kawanishi and T. Ohmi and H. Sasaki",

booktitle = "Proceedings of ISSM '98, the 7th international symposium on semiconductor manufacturing : October 7-9, Tokyo, Japan",

publisher = "Ultra Clean Technology",

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Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab. / Haagh, P.A.M.; Wilkens, A.U.; Campen, van, E.J.J.; Rooda, J.E.; Rulkens, H.J.A.

Proceedings of ISSM '98, the 7th international symposium on semiconductor manufacturing : October 7-9, Tokyo, Japan. ed. / T. Kawanishi; T. Ohmi; H. Sasaki. Tokyo : Ultra Clean Technology, 1998. p. 69-72.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Application of a layout design method to the dielectric deposition area in a 300 mm wafer fab

AU - Haagh, P.A.M.

AU - Wilkens, A.U.

AU - Campen, van, E.J.J.

AU - Rooda, J.E.

AU - Rulkens, H.J.A.

PY - 1998

Y1 - 1998

M3 - Conference contribution

SP - 69

EP - 72

BT - Proceedings of ISSM '98, the 7th international symposium on semiconductor manufacturing : October 7-9, Tokyo, Japan

A2 - Kawanishi, T.

A2 - Ohmi, T.

A2 - Sasaki, H.

PB - Ultra Clean Technology

CY - Tokyo

ER -