Apparatus and method for reactive ion etching

F. Roozeboom (Inventor), A.M. Lankhorst (Inventor), P.W.G. Poodt (Inventor), N.B. Koster (Inventor), G.J.J. Winands (Inventor), A.J.P.M. Vermeer (Inventor)

Research output: PatentPatent publication

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Abstract

The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.
Original languageEnglish
Patent numberUS9761458
Priority date12/09/17
Publication statusPublished - 12 Sep 2017

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