Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array

D. Sreenivasan; J.E.M. Haverkort; O. Ipek; B. Martinez-Vazquez; T.J. Eijkemans; T. Mano; R. Nötzel

doi:10.1016/j.physe.2007.08.094

Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array

D. Sreenivasan, J.E.M. Haverkort, O. Ipek, B. Martinez-Vazquez, T.J. Eijkemans, T. Mano, R. Nötzel

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice is studied as a function oftemperature. Time-resolved differential reflectivity reveals an anomalous increase of the capture time between 40 and 100 K.Photoluminescence data indicate carrier re-emission out of the QWRs into the QDs, in this temperature range. The anomaloustemperature dependence is interpreted as due to the temperature dependence of the effective carrier diffusion length in this structure.

Original language	English
Pages (from-to)	1879-1881
Number of pages	3
Journal	Physica E: Low-Dimensional Systems & Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.08.094
Publication status	Published - 2008

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title = "Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array",

abstract = "Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice is studied as a function oftemperature. Time-resolved differential reflectivity reveals an anomalous increase of the capture time between 40 and 100 K.Photoluminescence data indicate carrier re-emission out of the QWRs into the QDs, in this temperature range. The anomaloustemperature dependence is interpreted as due to the temperature dependence of the effective carrier diffusion length in this structure.",

author = "D. Sreenivasan and J.E.M. Haverkort and O. Ipek and B. Martinez-Vazquez and T.J. Eijkemans and T. Mano and R. N{\"o}tzel",

year = "2008",

doi = "10.1016/j.physe.2007.08.094",

language = "English",

volume = "40",

pages = "1879--1881",

journal = "Physica E: Low-Dimensional Systems & Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array

AU - Sreenivasan, D.

AU - Haverkort, J.E.M.

AU - Ipek, O.

AU - Martinez-Vazquez, B.

AU - Eijkemans, T.J.

AU - Mano, T.

AU - Nötzel, R.

PY - 2008

Y1 - 2008

N2 - Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice is studied as a function oftemperature. Time-resolved differential reflectivity reveals an anomalous increase of the capture time between 40 and 100 K.Photoluminescence data indicate carrier re-emission out of the QWRs into the QDs, in this temperature range. The anomaloustemperature dependence is interpreted as due to the temperature dependence of the effective carrier diffusion length in this structure.

AB - Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice is studied as a function oftemperature. Time-resolved differential reflectivity reveals an anomalous increase of the capture time between 40 and 100 K.Photoluminescence data indicate carrier re-emission out of the QWRs into the QDs, in this temperature range. The anomaloustemperature dependence is interpreted as due to the temperature dependence of the effective carrier diffusion length in this structure.

U2 - 10.1016/j.physe.2007.08.094

DO - 10.1016/j.physe.2007.08.094

M3 - Article

SN - 1386-9477

VL - 40

SP - 1879

EP - 1881

JO - Physica E: Low-Dimensional Systems & Nanostructures

JF - Physica E: Low-Dimensional Systems & Nanostructures

IS - 6

ER -

Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array

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