Anomalous current transients in organic field-effect transistors

A. Sharma, S.G.J. Mathijssen, T. Cramer, M. Kemerink, D.M. Leeuw, de, P.A. Bobbert

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)
148 Downloads (Pure)


Here we study the origin of the gate bias-stress effect in organic p-type transistors. Based on water-mediated exchange between holes in the semiconductor and protons in the gate dielectric, we predict anomalous current transients for a non-constant gate bias, while ensuring accumulation. When applying a strongly negative gate bias followed by a less negative bias a back-transfer of protons to holes and an increase of the current is expected. We verify this counterintuitive behavior experimentally and can quantitatively model the transients with the same parameters as used to describe the threshold voltage shift.
Original languageEnglish
Article number103306
Pages (from-to)103306-1/3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2010


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