Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation

L.K.J. Vandamme, L.B. Kiss, O.L.J. Stoelinga

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channels has been found. At fixed drain voltage, biasing the device well in saturation, the noise current abruptly decreased by more than an order of magnitude with increasing gate voltage well above the threshold voltage. We will prove that the effect is due to the strong resistance noise of the parasitic source series resistance. An earlier, controversial result of Park and Van der Ziel can be reinterpreted in the same way.
Original languageEnglish
Pages (from-to)697-700
Number of pages4
JournalSolid-State Electronics
Volume43
Issue number4
DOIs
Publication statusPublished - 1999

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