Annealing of proton-damaged GaAs and 1/f noise

X.Y. Chen; L.C. Folter, de

doi:10.1088/0268-1242/12/10/004

Annealing of proton-damaged GaAs and 1/f noise

X.Y. Chen, L.C. Folter, de

Integrated Circuits

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13 Citations (Scopus)

Abstract

GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton irradiation disappeared completely after the annealing. The 1/f noise created by proton irradiation did not depend on the measurement temperature. It could be reduced systematically by annealing at temperatures in the range of 543 - 563 K. In an isochronal annealing procedure, annealing at different temperature for a constant length of time, we found annealing effects on the free charge carrier concentration but not on the 1/f noise. 1/f noise is a fluctuation in mobility originating from clusters of defects. The annealing of damaged GaAs characterizes these noise generating defects by an activation energy of 1 eV.

Original language	English
Pages (from-to)	1195-1201
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	12
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/12/10/004
Publication status	Published - 1997

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title = "Annealing of proton-damaged GaAs and 1/f noise",

abstract = "GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton irradiation disappeared completely after the annealing. The 1/f noise created by proton irradiation did not depend on the measurement temperature. It could be reduced systematically by annealing at temperatures in the range of 543 - 563 K. In an isochronal annealing procedure, annealing at different temperature for a constant length of time, we found annealing effects on the free charge carrier concentration but not on the 1/f noise. 1/f noise is a fluctuation in mobility originating from clusters of defects. The annealing of damaged GaAs characterizes these noise generating defects by an activation energy of 1 eV.",

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year = "1997",

doi = "10.1088/0268-1242/12/10/004",

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T1 - Annealing of proton-damaged GaAs and 1/f noise

AU - Chen, X.Y.

AU - Folter, de, L.C.

PY - 1997

Y1 - 1997

N2 - GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton irradiation disappeared completely after the annealing. The 1/f noise created by proton irradiation did not depend on the measurement temperature. It could be reduced systematically by annealing at temperatures in the range of 543 - 563 K. In an isochronal annealing procedure, annealing at different temperature for a constant length of time, we found annealing effects on the free charge carrier concentration but not on the 1/f noise. 1/f noise is a fluctuation in mobility originating from clusters of defects. The annealing of damaged GaAs characterizes these noise generating defects by an activation energy of 1 eV.

AB - GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton irradiation disappeared completely after the annealing. The 1/f noise created by proton irradiation did not depend on the measurement temperature. It could be reduced systematically by annealing at temperatures in the range of 543 - 563 K. In an isochronal annealing procedure, annealing at different temperature for a constant length of time, we found annealing effects on the free charge carrier concentration but not on the 1/f noise. 1/f noise is a fluctuation in mobility originating from clusters of defects. The annealing of damaged GaAs characterizes these noise generating defects by an activation energy of 1 eV.

U2 - 10.1088/0268-1242/12/10/004

DO - 10.1088/0268-1242/12/10/004

M3 - Article

VL - 12

SP - 1195

EP - 1201

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

ER -

Annealing of proton-damaged GaAs and 1/f noise

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