Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

P. Offermans; P.M. Koenraad; J.H. Wolter; J.D. Song; J.M. Kim; S.J. Bae; Y.T. Lee; Jong Min Kim

doi:10.1063/1.1555265

Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

P. Offermans, P.M. Koenraad, J.H. Wolter, J.D. Song, J.M. Kim, S.J. Bae, Y.T. Lee, Jong Min Kim

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Abstract

We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digital alloy InGaAlAs ( lambda =1.3 mu m) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 degrees C annealed sample. The 800 degrees C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 degrees C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 degrees C annealed samples was the same. Annealing at 800 degrees C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys

Original language	English
Pages (from-to)	1191-1193
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1555265
Publication status	Published - 2003

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title = "Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography",

abstract = "We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digital alloy InGaAlAs ( lambda =1.3 mu m) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 degrees C annealed sample. The 800 degrees C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 degrees C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 degrees C annealed samples was the same. Annealing at 800 degrees C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys",

author = "P. Offermans and P.M. Koenraad and J.H. Wolter and J.D. Song and J.M. Kim and S.J. Bae and Y.T. Lee and Kim, {Jong Min}",

year = "2003",

doi = "10.1063/1.1555265",

language = "English",

volume = "82",

pages = "1191--1193",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Wolter, J.H.

AU - Song, J.D.

AU - Kim, J.M.

AU - Bae, S.J.

AU - Lee, Y.T.

AU - Kim, Jong Min

PY - 2003

Y1 - 2003

N2 - We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digital alloy InGaAlAs ( lambda =1.3 mu m) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 degrees C annealed sample. The 800 degrees C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 degrees C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 degrees C annealed samples was the same. Annealing at 800 degrees C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys

AB - We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digital alloy InGaAlAs ( lambda =1.3 mu m) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 degrees C annealed sample. The 800 degrees C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 degrees C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 degrees C annealed samples was the same. Annealing at 800 degrees C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys

U2 - 10.1063/1.1555265

DO - 10.1063/1.1555265

M3 - Article

SN - 0003-6951

VL - 82

SP - 1191

EP - 1193

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

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