Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

P. Offermans, P.M. Koenraad, J.H. Wolter, J.D. Song, J.M. Kim, S.J. Bae, Y.T. Lee, Jong Min Kim

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Abstract

We have investigated the structural properties of as-grown and annealed (750 and 800 degrees C) digital alloy InGaAlAs ( lambda =1.3 mu m) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 degrees C annealed sample. The 800 degrees C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 degrees C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 degrees C annealed samples was the same. Annealing at 800 degrees C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys
Original languageEnglish
Pages (from-to)1191-1193
JournalApplied Physics Letters
Volume82
Issue number8
DOIs
Publication statusPublished - 2003

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