@inbook{c10b7716839e44b4b5e9529df254cd2d,
title = "Annealing of implants reduces lattice defects and 1/f noise",
abstract = "Annealing of implants causes a decrease in Hooge{\textquoteright}s 1/f noise parameter α. The α-value is proportional to e∆E/kTan With Tan the anneal temperature. The activation energy ∆E = 1.1 eV for silicon corresponds to that for auto diffusion of atoms which is for different materials given by ∆E(eV) = 6.5 × 10-4 Tm with Tm(K) the melting temperature. Considering the 1/f and generation recombination noise, the optimum anneal temperature for different semiconductors is obtained at Tan* ≅ 0.6 Tm.",
author = "L.K.J. Vandamme",
year = "1988",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/SSP.1-2.153",
language = "English",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications",
pages = "153--158",
editor = "D. Stievenard and J.C. Bourgoin",
booktitle = "Solid State Phenomena",
address = "Germany",
}