Annealing of implants reduces lattice defects and 1/f noise

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

11 Citations (Scopus)

Abstract

Annealing of implants causes a decrease in Hooge’s 1/f noise parameter α. The α-value is proportional to e∆E/kTan With Tan the anneal temperature. The activation energy ∆E = 1.1 eV for silicon corresponds to that for auto diffusion of atoms which is for different materials given by ∆E(eV) = 6.5 × 10-4 Tm with Tm(K) the melting temperature. Considering the 1/f and generation recombination noise, the optimum anneal temperature for different semiconductors is obtained at Tan* ≅ 0.6 Tm.

Original languageEnglish
Title of host publicationSolid State Phenomena
EditorsD. Stievenard, J.C. Bourgoin
PublisherTrans Tech Publications
Pages153-158
Number of pages6
DOIs
Publication statusPublished - 1 Jan 1988
Externally publishedYes

Publication series

NameSolid State Phenomena
Volume1-2
ISSN (Electronic)1662-9779

Fingerprint

Dive into the research topics of 'Annealing of implants reduces lattice defects and 1/f noise'. Together they form a unique fingerprint.

Cite this