Anisotropic infrared light emission from quasi-1D layered TiS3

A. Khatibi (Corresponding author), Rasmus Godiksen, Saravana Basuvalingam, Daniele Pellegrino, Ageeth Bol, Babak Shokri, Alberto G. Curto (Corresponding author)

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Abstract

Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-one-dimensional chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths.
Original languageEnglish
Article number015022
Number of pages8
Journal2D Materials
Volume7
Issue number1
DOIs
Publication statusPublished - Jan 2020

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Light emission
light emission
optoelectronic devices
linear polarization
Infrared radiation
Excitons
Optoelectronic devices
excitons
photonics
Polarization
Semiconductor materials
Nanophotonics
Photonic devices
electromagnetic spectra
electromagnetic absorption
Titanium
Temperature
Photonics
Light absorption
Telecommunication

Keywords

  • excitons
  • infrared luminescence
  • linear polarization anisotropy
  • titanium trisulfide
  • transition metal trichalcogenides

Cite this

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title = "Anisotropic infrared light emission from quasi-1D layered TiS3",
abstract = "Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-one-dimensional chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths.",
keywords = "excitons, infrared luminescence, linear polarization anisotropy, titanium trisulfide, transition metal trichalcogenides",
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year = "2020",
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doi = "10.1088/2053-1583/ab57ef",
language = "English",
volume = "7",
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Anisotropic infrared light emission from quasi-1D layered TiS3. / Khatibi, A. (Corresponding author); Godiksen, Rasmus; Basuvalingam, Saravana; Pellegrino, Daniele; Bol, Ageeth; Shokri, Babak; Curto, Alberto G. (Corresponding author).

In: 2D Materials, Vol. 7, No. 1, 015022, 01.2020.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Anisotropic infrared light emission from quasi-1D layered TiS3

AU - Khatibi, A.

AU - Godiksen, Rasmus

AU - Basuvalingam, Saravana

AU - Pellegrino, Daniele

AU - Bol, Ageeth

AU - Shokri, Babak

AU - Curto, Alberto G.

PY - 2020/1

Y1 - 2020/1

N2 - Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-one-dimensional chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths.

AB - Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-one-dimensional chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths.

KW - excitons

KW - infrared luminescence

KW - linear polarization anisotropy

KW - titanium trisulfide

KW - transition metal trichalcogenides

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DO - 10.1088/2053-1583/ab57ef

M3 - Article

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JO - 2D Materials

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SN - 2053-1583

IS - 1

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