Analytical passive mixer power gain models

M. Lont; D. Milosevic; P.G.M. Baltus; A.H.M. Roermund, van; G. Dolmans

doi:10.1109/ISCAS.2010.5537183

Analytical passive mixer power gain models

M. Lont, D. Milosevic, P.G.M. Baltus, A.H.M. Roermund, van, G. Dolmans

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

207 Downloads (Pure)

Abstract

According to the well-known Friis equation the available power gain should be maximized to reduce the overall noise figure. Therefore, in receivers where an LNA is not present or its gain is low, the available power gain of the passive mixer is of interest. However, only the voltage gain is presented in many papers. In this paper an analytical model is presented for the power gain, voltage gain and input and output impedance of a passive mixer. The model is obtained using time-domain analysis since the mixer is periodically time variant. The validity of the models is checked using CMOS 90 nm transistor simulations.

Original language	English
Title of host publication	Proceeding of 2010 IEEE International Symposium on Circuits and Systems (ISCAS) May 30-June 2 2010, Paris, France 0
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	2386-2389
ISBN (Print)	978-1-4244-5308-5
DOIs	https://doi.org/10.1109/ISCAS.2010.5537183
Publication status	Published - 2010

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10.1109/ISCAS.2010.5537183

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title = "Analytical passive mixer power gain models",

abstract = "According to the well-known Friis equation the available power gain should be maximized to reduce the overall noise figure. Therefore, in receivers where an LNA is not present or its gain is low, the available power gain of the passive mixer is of interest. However, only the voltage gain is presented in many papers. In this paper an analytical model is presented for the power gain, voltage gain and input and output impedance of a passive mixer. The model is obtained using time-domain analysis since the mixer is periodically time variant. The validity of the models is checked using CMOS 90 nm transistor simulations.",

author = "M. Lont and D. Milosevic and P.G.M. Baltus and {Roermund, van}, A.H.M. and G. Dolmans",

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language = "English",

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publisher = "Institute of Electrical and Electronics Engineers",

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Analytical passive mixer power gain models. / Lont, M.; Milosevic, D.; Baltus, P.G.M. et al.
Proceeding of 2010 IEEE International Symposium on Circuits and Systems (ISCAS) May 30-June 2 2010, Paris, France 0. Piscataway: Institute of Electrical and Electronics Engineers, 2010. p. 2386-2389.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Milosevic, D.

AU - Baltus, P.G.M.

AU - Roermund, van, A.H.M.

AU - Dolmans, G.

PY - 2010

Y1 - 2010

N2 - According to the well-known Friis equation the available power gain should be maximized to reduce the overall noise figure. Therefore, in receivers where an LNA is not present or its gain is low, the available power gain of the passive mixer is of interest. However, only the voltage gain is presented in many papers. In this paper an analytical model is presented for the power gain, voltage gain and input and output impedance of a passive mixer. The model is obtained using time-domain analysis since the mixer is periodically time variant. The validity of the models is checked using CMOS 90 nm transistor simulations.

AB - According to the well-known Friis equation the available power gain should be maximized to reduce the overall noise figure. Therefore, in receivers where an LNA is not present or its gain is low, the available power gain of the passive mixer is of interest. However, only the voltage gain is presented in many papers. In this paper an analytical model is presented for the power gain, voltage gain and input and output impedance of a passive mixer. The model is obtained using time-domain analysis since the mixer is periodically time variant. The validity of the models is checked using CMOS 90 nm transistor simulations.

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DO - 10.1109/ISCAS.2010.5537183

M3 - Conference contribution

SN - 978-1-4244-5308-5

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BT - Proceeding of 2010 IEEE International Symposium on Circuits and Systems (ISCAS) May 30-June 2 2010, Paris, France 0

PB - Institute of Electrical and Electronics Engineers

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ER -

Analytical passive mixer power gain models

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