Analytical drain‐current model of p‐ and n‐channel OTFTs for circuit simulation

F. Torricelli, M. Ghittorelli, M. Rapisarda, L. Mariucci, S. Jacob, R. Coppard, E. Cantatore, Z.M. Kovacs-Vajna, L. Colalongo

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Abstract

Organic thin-film transistors (OTFTs) are an emerging technology for large scale circuit integration, owing the availability of both p- and n- channel devices. For the technology development and the design of circuits and digital systems, the accurate physical modeling is mandatory. In this work we propose an unified analytical model for both p- and n- type OTFTs. The model is physically based and accounts for a double exponential density of states (DOS). It is simple, symmetric and accurately describes the below-threshold, linear, and saturation regimes via a unique formulation. The model is eventually validated with the measurements of complementary OTFTs fabricated in a fullyprinted technology
Original languageEnglish
Title of host publicationProceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 9-11 September 2014, Yokohama, Japan
Place of Publications.l.
Publishers.n.
Number of pages7
Publication statusPublished - 2014
EventProc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014 - Yokohama, Japan
Duration: 1 Jan 2014 → …

Conference

ConferenceProc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014
Abbreviated titleSISPAD 2014
CountryJapan
CityYokohama
Period1/01/14 → …

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