Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

Y. Jiao, B.W. Tilma, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

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Abstract

In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.
Original languageEnglish
Title of host publicationProceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium
Place of PublicationGhent, Belgium
PublisherUniversiteit Gent
Pages97-100
ISBN (Print)978-90-85784-67-8
Publication statusPublished - 2011
Event16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium - Ghent, Belgium
Duration: 1 Dec 20112 Dec 2011
http://www.photonics-benelux.org/symp11/

Conference

Conference16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium
CountryBelgium
CityGhent
Period1/12/112/12/11
Internet address

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