Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

Y. Jiao; B.W. Tilma; J. Kotani; R. Nötzel; M.K. Smit; E.A.J.M. Bente

Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

Y. Jiao, B.W. Tilma, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.

Original language	English
Title of host publication	Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium
Place of Publication	Ghent, Belgium
Publisher	Universiteit Gent
Pages	97-100
ISBN (Print)	978-90-85784-67-8
Publication status	Published - 2011
Event	16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium - Ghent, Belgium Duration: 1 Dec 2011 → 2 Dec 2011 http://www.photonics-benelux.org/symp11/

Conference

Conference	16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium
Country/Territory	Belgium
City	Ghent
Period	1/12/11 → 2/12/11
Internet address	http://www.photonics-benelux.org/symp11/

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title = "Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model",

abstract = "In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.",

author = "Y. Jiao and B.W. Tilma and J. Kotani and R. N{\"o}tzel and M.K. Smit and E.A.J.M. Bente",

year = "2011",

language = "English",

isbn = "978-90-85784-67-8",

pages = "97--100",

booktitle = "Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium",

publisher = "Universiteit Gent",

note = "16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium ; Conference date: 01-12-2011 Through 02-12-2011",

url = "http://www.photonics-benelux.org/symp11/",

}

Jiao, Y, Tilma, BW, Kotani, J, Nötzel, R, Smit, MK & Bente, EAJM 2011, Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. in Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium. Universiteit Gent, Ghent, Belgium, pp. 97-100, 16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium, Ghent, Belgium, 1/12/11.

Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. / Jiao, Y.; Tilma, B.W.; Kotani, J.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium. Ghent, Belgium : Universiteit Gent, 2011. p. 97-100.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

AU - Jiao, Y.

AU - Tilma, B.W.

AU - Kotani, J.

AU - Nötzel, R.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

PY - 2011

Y1 - 2011

N2 - In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.

AB - In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.

M3 - Conference contribution

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EP - 100

BT - Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium

PB - Universiteit Gent

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T2 - 16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium

Y2 - 1 December 2011 through 2 December 2011

ER -

Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

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