Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

B.W. Tilma; M.S. Tahvili; J. Kotani; R. Nötzel; M.K. Smit; E.A.J.M. Bente

Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

B.W. Tilma, M.S. Tahvili, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.

Original language	English
Title of host publication	Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom
Place of Publication	London
Publisher	Institution of Engineering and Technology (IET)
Pages	ThP14-1/2
Publication status	Published - 2010

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Tilma, B. W., Tahvili, M. S., Kotani, J., Nötzel, R., Smit, M. K., & Bente, E. A. J. M. (2010). Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. In Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom (pp. ThP14-1/2). Institution of Engineering and Technology (IET).

@inproceedings{ed9f7f4a618b479285963302d52e73b9,

title = "Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers",

abstract = "InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.",

author = "B.W. Tilma and M.S. Tahvili and J. Kotani and R. N{\"o}tzel and M.K. Smit and E.A.J.M. Bente",

year = "2010",

language = "English",

pages = "ThP14--1/2",

booktitle = "Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom",

publisher = "Institution of Engineering and Technology (IET)",

address = "United Kingdom",

}

Tilma, BW, Tahvili, MS, Kotani, J, Nötzel, R, Smit, MK & Bente, EAJM 2010, Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. in Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. Institution of Engineering and Technology (IET), London, pp. ThP14-1/2.

Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. / Tilma, B.W.; Tahvili, M.S.; Kotani, J. et al.
Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. London: Institution of Engineering and Technology (IET), 2010. p. ThP14-1/2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

AU - Tilma, B.W.

AU - Tahvili, M.S.

AU - Kotani, J.

AU - Nötzel, R.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

PY - 2010

Y1 - 2010

N2 - InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.

AB - InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.

M3 - Conference contribution

SP - ThP14-1/2

BT - Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom

PB - Institution of Engineering and Technology (IET)

CY - London

ER -

Tilma BW, Tahvili MS, Kotani J, Nötzel R, Smit MK , Bente EAJM. Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. In Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. London: Institution of Engineering and Technology (IET). 2010. p. ThP14-1/2

Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

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