Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

B.W. Tilma, M.S. Tahvili, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

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Abstract

InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.
Original languageEnglish
Title of host publicationProceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom
Place of PublicationLondon
PublisherInstitution of Engineering and Technology (IET)
PagesThP14-1/2
Publication statusPublished - 2010

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    Tilma, B. W., Tahvili, M. S., Kotani, J., Nötzel, R., Smit, M. K., & Bente, E. A. J. M. (2010). Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. In Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom (pp. ThP14-1/2). London: Institution of Engineering and Technology (IET).