InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.
|Title of host publication||Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom|
|Place of Publication||London|
|Publisher||Institution of Engineering and Technology (IET)|
|Publication status||Published - 2010|
Tilma, B. W., Tahvili, M. S., Kotani, J., Nötzel, R., Smit, M. K., & Bente, E. A. J. M. (2010). Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. In Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom (pp. ThP14-1/2). London: Institution of Engineering and Technology (IET).