Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

H.G. Bukkems; Y.S. Oei; U. Richter; B. Gruska

doi:10.1016/S0040-6090(99)00956-6

Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

H.G. Bukkems, Y.S. Oei, U. Richter, B. Gruska

Photonic Integration

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Abstract

Thickness and complex refractive index of each layer in a double hetero structure, consisting of InP and InGaAsP, are obtained by spectroscopic ellipsometry. Accuracy is at least 2% in layer thickness and 0.005 in the refractive index of InP. An equation description of the complex refractive index allows for flexible description of InP-based materials in the wavelength range of 800–1700 nm. Simultaneous determination of thickness and refractive index by non-destructive ellipsometry in the near infra red (NIR) for the layers in a double hetero layer stack requires additional information on the properties of these layers

Original language	English
Pages (from-to)	165-170
Number of pages	6
Journal	Thin Solid Films
Volume	364
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(99)00956-6
Publication status	Published - 2000

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title = "Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range",

abstract = "Thickness and complex refractive index of each layer in a double hetero structure, consisting of InP and InGaAsP, are obtained by spectroscopic ellipsometry. Accuracy is at least 2% in layer thickness and 0.005 in the refractive index of InP. An equation description of the complex refractive index allows for flexible description of InP-based materials in the wavelength range of 800–1700 nm. Simultaneous determination of thickness and refractive index by non-destructive ellipsometry in the near infra red (NIR) for the layers in a double hetero layer stack requires additional information on the properties of these layers",

author = "H.G. Bukkems and Y.S. Oei and U. Richter and B. Gruska",

year = "2000",

doi = "10.1016/S0040-6090(99)00956-6",

language = "English",

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T1 - Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

AU - Bukkems, H.G.

AU - Oei, Y.S.

AU - Richter, U.

AU - Gruska, B.

PY - 2000

Y1 - 2000

N2 - Thickness and complex refractive index of each layer in a double hetero structure, consisting of InP and InGaAsP, are obtained by spectroscopic ellipsometry. Accuracy is at least 2% in layer thickness and 0.005 in the refractive index of InP. An equation description of the complex refractive index allows for flexible description of InP-based materials in the wavelength range of 800–1700 nm. Simultaneous determination of thickness and refractive index by non-destructive ellipsometry in the near infra red (NIR) for the layers in a double hetero layer stack requires additional information on the properties of these layers

AB - Thickness and complex refractive index of each layer in a double hetero structure, consisting of InP and InGaAsP, are obtained by spectroscopic ellipsometry. Accuracy is at least 2% in layer thickness and 0.005 in the refractive index of InP. An equation description of the complex refractive index allows for flexible description of InP-based materials in the wavelength range of 800–1700 nm. Simultaneous determination of thickness and refractive index by non-destructive ellipsometry in the near infra red (NIR) for the layers in a double hetero layer stack requires additional information on the properties of these layers

U2 - 10.1016/S0040-6090(99)00956-6

DO - 10.1016/S0040-6090(99)00956-6

M3 - Article

VL - 364

SP - 165

EP - 170

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

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