Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

H.G. Bukkems, Y.S. Oei, U. Richter, B. Gruska

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
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Abstract

Thickness and complex refractive index of each layer in a double hetero structure, consisting of InP and InGaAsP, are obtained by spectroscopic ellipsometry. Accuracy is at least 2% in layer thickness and 0.005 in the refractive index of InP. An equation description of the complex refractive index allows for flexible description of InP-based materials in the wavelength range of 800–1700 nm. Simultaneous determination of thickness and refractive index by non-destructive ellipsometry in the near infra red (NIR) for the layers in a double hetero layer stack requires additional information on the properties of these layers
Original languageEnglish
Pages (from-to)165-170
Number of pages6
JournalThin Solid Films
Volume364
Issue number1-2
DOIs
Publication statusPublished - 2000

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