Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

H.G. Bukkems; Y.S. Oei; U. Richter; B. Gruska

doi:10.1016/S0040-6090(99)00956-6

Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

H.G. Bukkems, Y.S. Oei, U. Richter, B. Gruska

Photonic Integration

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Abstract

Thickness and complex refractive index of each layer in a double hetero structure, consisting of InP and InGaAsP, are obtained by spectroscopic ellipsometry. Accuracy is at least 2% in layer thickness and 0.005 in the refractive index of InP. An equation description of the complex refractive index allows for flexible description of InP-based materials in the wavelength range of 800–1700 nm. Simultaneous determination of thickness and refractive index by non-destructive ellipsometry in the near infra red (NIR) for the layers in a double hetero layer stack requires additional information on the properties of these layers

Original language	English
Pages (from-to)	165-170
Number of pages	6
Journal	Thin Solid Films
Volume	364
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(99)00956-6
Publication status	Published - 2000

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Bukkems, H. G., Oei, Y. S., Richter, U., & Gruska, B. (2000). Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range. Thin Solid Films, 364(1-2), 165-170. https://doi.org/10.1016/S0040-6090(99)00956-6

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AU - Gruska, B.

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U2 - 10.1016/S0040-6090(99)00956-6

DO - 10.1016/S0040-6090(99)00956-6

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