We numerically analyze the etch depth as a design parameter for the realization of integrated polarization independent directional couplers. Through finite-element-method simulations, the coupling coefficients of transverse-electric (TE) and transverse-magnetic (TM) polarizations are investigated according to different etch depth levels in the coupling section of the studied device. By optimizing etching depth, the proposed coupler can perform similarly for both polarizations in broadband. According to simulation results, the minimum difference between the TE and TM coupling coefficients can be kept less than 1% in 100 nm of the wavelength range.
|Title of host publication||Proceedings of 2020 Italian Conference on Optics and Photonics, ICOP 2020|
|Editors||Silvia Maria Pietralunga, Stefano Selleri|
|Publisher||Institute of Electrical and Electronics Engineers|
|Number of pages||4|
|Publication status||Published - 25 Dec 2020|
|Event||2020 Italian Conference on Optics and Photonics, ICOP 2020 - Parma, Italy|
Duration: 8 Sept 2020 → 11 Sept 2020
|Conference||2020 Italian Conference on Optics and Photonics, ICOP 2020|
|Period||8/09/20 → 11/09/20|
Bibliographical notePublisher Copyright:
© 2020 IEEE.
Copyright 2021 Elsevier B.V., All rights reserved.
- directional couplers
- photonic integrated circuits
- polarization-independent circuits