Analysis of Cu/low-k bond pad delamination by using a novel failure index

M.A.J. Gils, van, O. Sluis, van der, G.Q. Zhang, J.H.J. Janssen, R.M.J. Voncken

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)


For the development of state-of-the-art Cu/low-k CMOS technologies, the integration and introduction of new low-k materials are one of the major bottlenecks due to the bad thermal and mechanical integrity of these materials and the inherited weak interfacial adhesion. Especially the forces resulting from packaging related processes such as dicing, wire bonding, bumping and molding are critical and can easily result in cracking, delamination and chipping of the IC back-end structure if no appropriate measures are taken. This paper presents a methodology for optimizing the thermo-mechanical reliability of bond pads by using a 3D multi-scale Finite Element approach. An important characteristic of this methodology is the use of a novel energy-based failure index, which allows a fast qualitative comparison of different back-end structures. The usability of the methodology will be illustrated by the comparison of three different bond pad structures.
Original languageEnglish
Title of host publicationProceedings of the 6th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2005), Berlin
Publication statusPublished - 2005


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