Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

L. Hennen, E.H.A. Granneman, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

23 Citations (Scopus)


Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Number of pages6
Publication statusPublished - 26 Nov 2012
Event38th IEEE Photovoltaic Specialists Conference (PVSC 2012) - Austin Convention Center, Austin, United States
Duration: 3 Jun 20128 Jun 2012
Conference number: 38


Conference38th IEEE Photovoltaic Specialists Conference (PVSC 2012)
Abbreviated titlePVSC 2012
Country/TerritoryUnited States
Internet address


  • amorphous materials
  • charge carrier lifetime
  • dielectric films
  • hydrogen
  • photovoltaic cells
  • silicon


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