Abstract
Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.
Original language | English |
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Title of host publication | Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 |
Pages | 1049-1054 |
Number of pages | 6 |
DOIs | |
Publication status | Published - 26 Nov 2012 |
Event | 38th IEEE Photovoltaic Specialists Conference (PVSC 2012) - Austin Convention Center, Austin, United States Duration: 3 Jun 2012 → 8 Jun 2012 Conference number: 38 https://www.ieee-pvsc.org/PVSC38/ |
Conference
Conference | 38th IEEE Photovoltaic Specialists Conference (PVSC 2012) |
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Abbreviated title | PVSC 2012 |
Country/Territory | United States |
City | Austin |
Period | 3/06/12 → 8/06/12 |
Internet address |
Keywords
- amorphous materials
- charge carrier lifetime
- dielectric films
- hydrogen
- photovoltaic cells
- silicon