Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

L. Hennen; E.H.A. Granneman; W.M.M. Kessels

doi:10.1109/PVSC.2012.6317783

Analysis of blister formation in spatial ALD Al₂O₃ for silicon surface passivation

L. Hennen, E.H.A. Granneman, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

20 Citations (Scopus)

Abstract

Aluminum oxide (Al₂O₃) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al₂O₃ bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	1049-1054
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2012.6317783
Publication status	Published - 26 Nov 2012
Event	38th IEEE Photovoltaic Specialists Conference (PVSC 2012) - Austin Convention Center, Austin, United States Duration: 3 Jun 2012 → 8 Jun 2012 Conference number: 38 https://www.ieee-pvsc.org/PVSC38/

Conference

Conference	38th IEEE Photovoltaic Specialists Conference (PVSC 2012)
Abbreviated title	PVSC 2012
Country	United States
City	Austin
Period	3/06/12 → 8/06/12
Internet address	https://www.ieee-pvsc.org/PVSC38/

Keywords

amorphous materials
charge carrier lifetime
dielectric films
hydrogen
photovoltaic cells
silicon

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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title = "Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation",

abstract = "Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.",

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AB - Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

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