Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

L. Hennen; E.H.A. Granneman; W.M.M. Kessels

doi:10.1109/PVSC.2012.6317783

Analysis of blister formation in spatial ALD Al₂O₃ for silicon surface passivation

L. Hennen, E.H.A. Granneman, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

23 Citations (Scopus)

Abstract

Aluminum oxide (Al₂O₃) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al₂O₃ bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	1049-1054
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2012.6317783
Publication status	Published - 26 Nov 2012
Event	38th IEEE Photovoltaic Specialists Conference (PVSC 2012) - Austin Convention Center, Austin, United States Duration: 3 Jun 2012 → 8 Jun 2012 Conference number: 38 https://www.ieee-pvsc.org/PVSC38/

Conference

Conference	38th IEEE Photovoltaic Specialists Conference (PVSC 2012)
Abbreviated title	PVSC 2012
Country/Territory	United States
City	Austin
Period	3/06/12 → 8/06/12
Internet address	https://www.ieee-pvsc.org/PVSC38/

Keywords

amorphous materials
charge carrier lifetime
dielectric films
hydrogen
photovoltaic cells
silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2012.6317783

Cite this

@inproceedings{b206b4480e004964824f9be0eb375468,

title = "Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation",

abstract = "Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.",

keywords = "amorphous materials, charge carrier lifetime, dielectric films, hydrogen, photovoltaic cells, silicon",

author = "L. Hennen and E.H.A. Granneman and W.M.M. Kessels",

year = "2012",

month = nov,

day = "26",

doi = "10.1109/PVSC.2012.6317783",

language = "English",

isbn = "9781467300643",

pages = "1049--1054",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference (PVSC 2012), PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

url = "https://www.ieee-pvsc.org/PVSC38/",

}

TY - GEN

T1 - Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

AU - Hennen, L.

AU - Granneman, E.H.A.

AU - Kessels, W.M.M.

N1 - Conference code: 38

PY - 2012/11/26

Y1 - 2012/11/26

N2 - Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

AB - Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

KW - amorphous materials

KW - charge carrier lifetime

KW - dielectric films

KW - hydrogen

KW - photovoltaic cells

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84869470330&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6317783

DO - 10.1109/PVSC.2012.6317783

M3 - Conference contribution

AN - SCOPUS:84869470330

SN - 9781467300643

SP - 1049

EP - 1054

BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

T2 - 38th IEEE Photovoltaic Specialists Conference (PVSC 2012)

Y2 - 3 June 2012 through 8 June 2012

ER -